Electro-optical device with III-V gain materials and integrated heat sink

1. A method of fabricating an electro-optical device, the method comprising:

providing two components of the electro-optical device, wherein:

a first one of the components comprises a silicon substrate and a cladding layer on top of the silicon substrate, said providing the first one of the components comprises:

providing a silicon on insulator wafer that comprises: the silicon substrate; a first oxide layer on top of the silicon substrate; and a top silicon layer on top of the first oxide layer;

structuring the top silicon layer of the silicon on insulator wafer to obtain a silicon component; and

depositing a second oxide layer on top of the first oxide layer of the wafer provided, so as to form said cladding layer, the latter comprising the first oxide layer and the second oxide layer, with the silicon component embedded therein; and

a second one of the components comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation,

creating two cavities in said cladding layer, said creating comprising:

etching two cavities separated by a residual portion of said cladding layer in between, the silicon component embedded in said residual portion; and

filling the two etched cavities with an electrically insulating material to form respective thermal spreaders, wherein each thermal spreader has:

a thermal conductivity larger than that of the cladding layer; and

a refractive index that is lower than each of:

the refractive index of the silicon substrate; and

an average refractive index of the stack of III-V semiconductor gain materials for said given radiation, and

wafer bonding the two components and structuring the stack of III-V semiconductor gain materials so as to obtain a structured stack that faces and at least partially overlaps the formed thermal spreaders and is in thermal communication with each thermal spreader.

2. The method of fabricating according to claim 1 , wherein

each cavity is:

created by etching the cladding layer down to the silicon substrate; and

subsequently filled with a material to form the thermal spreader, so as for the latter to be in contact with the silicon substrate.

3. The method of fabricating according to claim 1 , wherein

the first wafer component provided is a silicon on insulator wafer and wherein the method further comprises, prior to creating each said cavity:

depositing a second oxide layer on a first oxide layer that corresponds to a buried oxide of the silicon on insulator wafer, so as to form said cladding layer, and wherein

each said cavity is subsequently etched through the second oxide layer so as for the each cavity to at least partly reach into the first oxide layer.

4. The method of fabricating according to claim 1 ,

wherein the stack of III-V semiconductor gain materials is structured so as for the resulting structured stack to be arranged opposite the thermal spreaders and in thermal communication therewith.