Semiconductor device having temperature sensor circuit that detects a temperature range upper limit value and a temperature range lower limit value

1. A device that operates over a plurality of predetermined temperature ranges, comprising:

at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type;

wherein the at least one first IGFET having the first conductivity type is coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating; wherein

the at least one subthreshold operating circuit operates at a power supply potential below a threshold voltage of the at least first one first IGFET.

2. The device of claim 1 , further including:

a first back bias voltage generating circuit coupled to receive at least one of a plurality of performance parameters and provide the first back body bias potential.

3. The device of claim 2 , wherein:

the at least one subthreshold operating circuit further includes at least one second IGFET having a second conductivity type; and

the at least one second IGFET having the second conductivity type is coupled to receive a second back body bias potential that changes according to the temperature range in which the device is operating.

4. The device of claim 3 , further including:

a second back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the second back body bias potential.

5. The device of claim 4 , wherein:

the at least one subthreshold operating circuit is coupled to receive a first power supply potential that changes according to the temperature range in which the device is operating.

6. The device of claim 5 , further including:

a first power supply generating circuit coupled to receive at least one of the plurality of performance parameters and provide the first power supply potential.

7. The device, of claim 1 , further including:

at least one above subthreshold operating circuit including at least one third IGFET having the first conductivity type;

wherein the at least one third IGFET having the first conductivity type is coupled to receive a third back body bias potential that changes according to the temperature range in which the device is operating; wherein

the at least one above threshold operating circuit operates at a power supply potential above the threshold voltage of the at least one first IGFET.

8. The device of claim 7 , wherein:

a third back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the third back body bias potential.

9. The device of claim 8 , further including:

the at least one above subthreshold operating circuit including at least one fourth IGFET having the second conductivity type;

wherein the at least one fourth IGFET having the second conductivity type is coupled to receive a fourth back body bias potential that changes according to the temperature range in which the device is operating.

10. The device of claim 9 , further including:

a fourth back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the fourth back body bias potential.

11. The device of claim 10 , further including:

the at least one above subthreshold operating circuit is coupled to receive a second power supply potential that changes according to the temperature range in which the device is operating.

12. The device, of claim 11 , further including:

a second power supply generating circuit coupled to receive at least one of the plurality of performance parameters and provide the second power supply potential.

13. The device of claim 1 , wherein the device is a semiconductor device.

14. A device, comprising:

at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type wherein

the at least one first IGFET is coupled to receive a first back body bias potential having a first potential when the device is operating within a first temperature range and a second potential when the device is operating within a second temperature range; wherein

the at least one subthreshold operating circuit operates at a power supply potential below a threshold voltage of the at least first one first IGFET.

15. The device of claim 14 , further including:

a first back bias voltage generating circuit coupled to receive at least one of a plurality of performance parameters and provide the first back body bias potential.

16. The device of claim 14 , wherein:

the at least one subthreshold operating circuit further includes at least one second IGFET having a second conductivity type; and

the at least one second IGFET having the second conductivity type is coupled to receive a second back body bias potential having a third potential when the device is operating within the first temperature range and a fourth potential when the device is operating within the second temperature range.

17. The device of claim 14 , further including:

a temperature circuit coupled to receive a value that sets the first temperature range and the second temperature range.

18. The device of claim 17 , further including:

the value is a count value; and

a counter circuit coupled to provide the count value.

19. The device of claim 18 , further including:

a performance parameter table coupled to receive the count value and provide a plurality of performance parameters; and

a first back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the first back body bias potential.

20. The device of claim 14 , wherein:

the device is a semiconductor device.