Resin composition for encapsulation, and semiconductor device

1. A resin composition for encapsulation used for encapsulating a power semiconductor element formed from SiC, GaN, Ga 2 O 3 , or diamond, the resin composition for encapsulation comprising:

a thermosetting resin (A); and

silica (B),

wherein the silica (B) includes Fe and Mn,

the content of Fe is equal to or less than 220 ppm with respect to the total amount of the silica (B),

the resin composition is in a granular form, a tablet form, or a sheet form, and

the sum value of the contents of Fe and Mn is equal to or less than 220 ppm with respect to the total amount of silica (B).

2. The resin composition for encapsulation according to claim 1 ,

wherein the silica (B) further includes Ni and Ti, and

the sum value of the contents of Fe, Mn, Ni, and Ti is equal to or less than 250 ppm with respect to the total amount of silica (B).

3. The resin composition for encapsulation according to claim 2 ,

wherein the proportion of the content of Fe with respect to the sum value of the contents of Fe, Mn, Ni, and Ti is equal to or less than 86.0%.

4. The resin composition for encapsulation according to claim 1 ,

wherein the thermosetting resin (A) includes a compound having two or more maleimide groups.

5. The resin composition for encapsulation according to claim 1 ,

wherein the content of SiO 2 with respect to the total amount of the silica (B) is equal to or more than 99.8% by mass.

6. The resin composition for encapsulation according to claim 1 ,

wherein the content of the silica (B) is equal to or more than 55% by mass and equal to or less than 90% by mass with respect to the total amount of the resin composition for encapsulation.

7. The resin composition for encapsulation according to claim 1 ,

wherein the flexural modulus at 250° C. of a cured product obtainable by heating the resin composition for encapsulation under the conditions of 200° C. and 120 seconds and then heating the resin composition under the conditions of 250° C. and 240 minutes, is equal to or higher than 3 GPa and equal to or lower than 16 GPa.

8. The resin composition for encapsulation according to claim 1 ,

wherein the glass transition temperature of a cured product obtainable by heating the resin composition for encapsulation under the conditions of 200° C. and 120 seconds and then heating the resin composition under the conditions of 250° C. and 240 minutes, is equal to or higher than 250° C. and equal to or lower than 350° C.

9. The resin composition for encapsulation according to claim 1 ,

wherein the resin composition for encapsulation is used for encapsulation so as to cover a surface between the surfaces of the power semiconductor elements mounted over a substrate, the surface being on the opposite side of the other surface that faces the substrate.

10. The resin composition for encapsulation according to claim 1 ,

wherein the resin composition for encapsulation is used for forming an encapsulant material so as to encapsulate the power semiconductor element having an operating environment of 200° C. or higher.

11. A semiconductor device comprising:

a power semiconductor element mounted over a substrate and formed from SiC, GaN, Ga 2 O 3 , or diamond; and

an encapsulant material constructed from a cured product of the resin composition for encapsulation according to claim 1 and intended for encapsulating the power semiconductor element.

12. The semiconductor device according to claim 11 ,

wherein the encapsulant material is used for encapsulating the power semiconductor element so as to cover a surface of the power semiconductor element, the surface being the surface on the opposite of the other surface that faces the substrate.