Coating made of a semiconductor material

1. A particle comprising:

perovskite crystals of the type ABX 3 or AB 2 X 4 ;

wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof;

B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation, the monovalent cation including monovalent amino group-containing, positively charged carbon compounds, amidinium ions, guanidinium ions, isothiuronium ions, formamidinium ions, primary, secondary, tertiary, and quaternized organic ammonium ions; and

X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and

a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

2. The particle as claimed in claim 1 , wherein the nucleus has a diameter of 0.01 to 200 μm, 0.1 to 100 μm, or 1 to 10 μm.

3. The particle as claimed in claim 1 , wherein the nucleus further comprises at least one scintillator.

4. The particle as claimed in claim 3 , wherein the at least one scintillator in the nucleus is covered by the perovskite crystals.

5. The coated particle as claimed in claim 1 , wherein the semiconductor material comprises at least one electron-conducting material or a hole-conducting material.

6. A method for producing coated particles, the method comprising:

producing a nucleus of perovskite crystals of the type ABX 3 or AB 2 X 4 , where A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table and/or mixtures thereof, B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation, the monovalent cation comprising monovalent amino group-containing, positively charged carbon compounds, amidinium ions, guanidinium ions, isothiuronium ions, formamidinium ions, or primary, secondary, tertiary, and quaternized organic ammonium ions, and X is selected from among the halides and pseudohalides;

coating the nucleus comprising with at least one semiconductor material by:

bringing the at least one semiconductor material into solution by means of at least one first solvent;

adding the nuclei comprising perovskite crystals to the solution;

subsequently, precipitating the coated particles by the addition of a further substance; and

removing the first solvent and the further substance.

7. The method as claimed in claim 6 , wherein the nuclei comprising perovskite crystals are not soluble in the first solvent.

8. The method as claimed in claim 6 , further comprising subjecting the solution to ultrasonic waves while the perovskite crystals are added to the solution.

9. The method as claimed in claim 1 , further comprising grinding the coated particles to a powder following the removal of the first solvent and the further substance.

10. A detector comprising coated particles comprising:

perovskite crystals of the type ABX 3 or AB 2 X 4 ;

wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof;

B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation, the monovalent cation including monovalent amino group-containing, positively charged carbon compounds, amidinium ions, guanidinium ions, isothiuronium ions, formamidinium ions, primary, secondary, tertiary, and quaternized organic ammonium ions; and

X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and

a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

11. A method for producing a detector or a solar cell, the method comprising:

applying a powder to a substrate, the powder comprising coated particles including:

perovskite crystals of the type ABX 3 or AB 2 X 4 ;

wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof;

B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation, the monovalent cation including monovalent amino group-containing, positively charged carbon compounds, amidinium ions, guanidinium ions, isothiuronium ions, formamidinium ions, primary, secondary, tertiary, and quaternized organic ammonium ions; and

X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and

a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals;

wherein the substrate includes a first electrical contact;

applying pressure for compaction of the powder; and

applying a second electrical contact.

12. The method as claimed in claim 11 , further comprising heating the substrate before applying pressure for compaction of the powder.

13. The method as claimed in claim 11 , wherein applying pressure includes use of a stamp or a roller or isostatically.

14. A method for producing a layer, the method comprising:

applying a powder to a substrate, the powder comprising coated particles including:

perovskite crystals of the type ABX 3 or AB 2 X 4 ;

wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof;

B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation, the monovalent cation including monovalent amino group-containing, positively charged carbon compounds, amidinium ions, guanidinium ions, isothiuronium ions, formamidinium ions, primary, secondary, tertiary, and quaternized organic ammonium ions; and

X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and

a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals; and

applying pressure for compaction of the powder.

15. The particle as claimed in claim 1 , wherein the at least one semiconductor material coats the particles with a thickness of 1 to 1500 nm, or 10 to 100 nm, or 20 to 50 nm.