IP Library › Granted Patent US 10,263,221
Granted Patent B2
US 10,263,221 · App. 15/922,288 · Granted Apr 16, 2019

Method for manufacturing light-emitting device

Inventors: Akihiro Chida (Kanagawa, JP); Kaoru Hatano (Kanagawa, JP); Tomoya Aoyama (Kanagawa, JP); Ryu Komatsu (Kanagawa, JP); Masatoshi Kataniwa (Tochigi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/56H01L27/1225H01L27/3246H01L27/3276H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L2227/323H01L2227/326H01L2251/5338H01L2251/5361
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Quick Facts
Patent No.
US 10,263,221
App. No.
15/922,288
Granted
Apr 16, 2019
Kind
B2
Abstract

A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Claims (37)

1. A method for manufacturing a light-emitting device, comprising:

providing first and second electrodes over a substrate;

providing a first organic layer over the first electrode and a second organic layer over the second electrode;

providing a third electrode over the second organic layer to form a light-emitting element comprising the second and third electrodes, and the second organic layer;

providing a support over the first electrode and the light-emitting element with a resin layer therebetween;

making a cut overlapping with the first electrode in at least the support;

partly removing the resin layer by using the cut to form an opening overlapping with the first electrode; and

removing the first organic layer remaining on the first electrode after foaming the opening,

wherein the first and second organic layers each contain a light-emitting substance.

2. The method according to claim 1 , wherein the first and second organic layers are in contact with the first and second electrodes, respectively.

3. The method according to claim 1 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

4. The method according to claim 1 , wherein the substrate is flexible.

5. The method according to claim 1 , wherein the support is flexible.

6. The method according to claim 1 , further comprising:

forming a conductive layer in the opening to be in contact with the first electrode.

7. The method according to claim 1 , wherein the step of removing the first organic layer remaining on the first electrode is performed using an organic solvent.

8. The method according to claim 1 , wherein the first and second organic layers contain the same light-emitting substance.

9. A method for manufacturing a light-emitting device, comprising:

providing a transistor and a first electrode over a substrate;

providing a second electrode electrically connected to the transistor over the transistor with an insulating layer therebetween;

providing a first organic layer over the first electrode and a second organic layer over the second electrode;

providing a third electrode over the second organic layer to form a light-emitting element comprising the second and third electrodes, and the second organic layer;

providing a support over the first electrode and the light-emitting element with a resin layer therebetween;

making a cut overlapping with the first electrode in at least the support;

partly removing the resin layer by using the cut to form an opening overlapping with the first electrode; and

removing the first organic layer remaining on the first electrode after forming the opening,

wherein the first and second organic layers each contain a light-emitting substance.

10. The method according to claim 9 , wherein the transistor comprises an oxide semiconductor layer.

11. The method according to claim 9 , wherein the first and second organic layers are in contact with the first and second electrodes, respectively.

12. The method according to claim 9 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

13. The method according to claim 9 , wherein the substrate is flexible.

14. The method according to claim 9 , wherein the support is flexible.

15. The method according to claim 9 , further comprising:

forming a conductive layer in the opening to be in contact with the first electrode.

16. The method according to claim 9 , wherein the step of removing the first organic layer remaining on the first electrode is performed using an organic solvent.

17. The method according to claim 9 , wherein the first and second organic layers contain the same light-emitting substance.

18. The method according to claim 9 , wherein the insulating layer includes a polyimide resin.

Priority Claims (2)
JP 2012-105553 · May 4, 2012 · national
JP 2013-053332 · Mar 15, 2013 · national
Continuity (3)
Continuation 15141157 · Apr 28, 2016
Continuation 13871248 · Apr 26, 2013
Related Publication 20180205042A1 · Jul 19, 2018