III-V nitride resonate structure based photoacoustic sensor
A microcantilever based photoacoustic sensor is generally provided. In one embodiment, the microcantilever includes: a substrate; a GaN layer on the substrate, wherein the GaN layer defines a cantilever extending beyond an edge of the substrate, with a base area of the cantilever defined by the area spanning the edge of the substrate; a heterojunction field effect transistor (HFET) deflection transducer positioned on the cantilever; a pair of electrical contacts, each electrically connected to the HFET deflection transducer; and a microfluidic channel in fluid communication with an analyte reservoir, wherein the analyte reservoir is positioned at the base of the cantilever. A sensing system is also generally provided.
1. A microcantilever based photoacoustic sensor, comprising:
a substrate;
a GaN layer on the substrate, wherein the GaN layer defines a microcantilever extending beyond an edge of the substrate, with a base area of the microcantilever defined by the edge of the substrate, wherein the microcantilever is encapsulated by a sapphire window and within a vacuum;
a heterojunction field-effect transistor (HFET) deflection transducer positioned on the microcantilever;
a pair of electrical contacts, each electrically connected to the HFET deflection transducer; wherein the HFET deflection transducer positioned on the microcantilever has a cross-section comprising the following layers arranged in consecutive horizontal order:
a buffer layer directly on the substrate;
the GaN layer directly on the buffer layer, wherein the GaN layer is undoped;
an AlN layer directly on the GaN layer;
an AlGaN layer directly on the AlN layer; and
an additional undoped GaN layer directly on the AlGaN layer; and
at least one microfluidic channel on the base area and in fluid communication with an analyte reservoir, wherein the analyte reservoir is positioned on the base area and adjacent to the microcantilever;
wherein the microcantilever based photoacoustic sensor has a gauge factor rater than 4500.
2. The microcantilever based photoacoustic sensor of claim 1 , further comprising:
wherein the sapphire window is positioned over and encapsulates the at least one microfluidic channel.
3. The microcantilever based photoacoustic sensor of claim 1 , wherein the at least one microfluidic channel and the reservoir are defined by surfaces coated with a poly(p-xylylene) polymer.
4. The microcantilever based photoacoustic sensor of claim 1 , wherein the substrate comprises silicon.
5. The microcantilever based photoacoustic sensor of claim 1 , wherein the microcantilever has a length of from 50 μm to 300 μm, a width of from 25 μm to 100 μm, and a thickness of from 0.5 μm to 1.5 μm.
6. The microcantilever based photoacoustic sensor of claim 1 , wherein the substrate comprises silicon, and wherein the buffer layer has a thickness from 0.5 μm to 2.5 μm on the substrate, and further wherein the GaN layer has a thickness from 500 nm to 2 μm.
7. A sensing system comprising:
the microcantilever based photoacoustic sensor of claim 1 ; and
a pulsed infrared laser positioned to direct infrared electromagnetic radiation into the analyte reservoir of the microcantilever based photoacoustic sensor.