IP Library › Granted Patent US 10,266,414
Granted Patent B2
US 10,266,414 · App. 15/153,177 · Granted Apr 23, 2019

Susceptor arrangement for a reactor and method of heating a process gas for a reactor

Inventor: Michael Matthew Zalar (Midland, MI)
Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
C01B33/1071H05B3/145H05B3/42H05B2203/022Y02P20/124
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Quick Facts
Patent No.
US 10,266,414
App. No.
15/153,177
Granted
Apr 23, 2019
Kind
B2
Abstract

A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

Claims (19)

1. A susceptor arrangement for a reactor comprising:

a heater element configured to heat a process gas to be used in the reactor;

an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path; and

an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

2. The susceptor arrangement of claim 1 , wherein the inner susceptor portion comprises a first inner susceptor wall and a second inner susceptor wall, the first inner susceptor wall and the second inner susceptor wall defining the radially inner process gas path, wherein the outer susceptor portion comprises a first outer susceptor wall and a second outer susceptor wall, the first outer susceptor wall and the second outer susceptor wall defining the radially outer process gas path.

3. The susceptor arrangement of claim 1 , further comprising an end susceptor portion defining an end process gas path that fluidly couples the radially outer process gas path and the radially inner process gas path.

4. The susceptor arrangement of claim 1 , wherein the inner susceptor portion and the outer susceptor portion are formed of at least one of graphite, silicon carbide coated graphite, silicon carbide coated carbon fiber, and a silicon carbide based compound including silicon carbide.

5. The susceptor arrangement of claim 1 , further comprising at least one opening defined by the outer susceptor portion, the opening configured to receive a heater electrode therein.

6. The susceptor arrangement of claim 1 , wherein the reactor is a hydrogenation reactor configured to produce trichlorosilane by reacting tetrachlorosilane and hydrogen into trichlorosilane and hydrogen chloride.

7. The susceptor arrangement of claim 1 , wherein the heater element is disposed in a heater region radially defined by the inner susceptor portion and the outer susceptor portion.

8. The susceptor arrangement of claim 7 , wherein the heater region is purged with a heater element protective fluid.

9. The susceptor arrangement of claim 8 , wherein the heater element protective fluid is at least one of gaseous tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, nitrogen, argon and hydrogen chloride.

10. The susceptor arrangement of claim 1 , wherein the heater element is positioned to equally distribute heat to the inner susceptor portion and the outer susceptor portion.

11. The susceptor arrangement of claim 1 , wherein the heater element is positioned equidistant from the inner susceptor portion and the outer susceptor portion.

12. The susceptor arrangement of claim 1 , wherein the inner susceptor portion, the outer susceptor portion and the heater element are each cylindrically shaped.

13. The susceptor arrangement of claim 3 , wherein the end susceptor portion is located proximate a top region of the susceptor arrangement.

14. The susceptor arrangement of claim 13 , further comprising a bottom susceptor portion extending between the outer susceptor portion and the inner susceptor portion, wherein the end susceptor portion, the bottom susceptor portion, the inner susceptor portion and the outer susceptor portion enclose the heater element.

15. The susceptor arrangement of claim 1 , further comprising a heat shield disposed radially outwardly of the outer susceptor portion.

16. The susceptor arrangement of claim 1 , wherein the process gas comprises a majority of hydrogen and a minority of at least one of tetrachlorosilane, chlorosilane, hydrogen chloride, a polysilane, and a carbon containing chlorosilane.

Assignments (2)
CHANGE OF NAME Recorded Nov 13, 2017
From: HEMLOCK SEMICONDUCTOR CORPORATION
To: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
Reel/Frame 044428/0248 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2016
From: ZALAR, MICHAEL MATTHEW
To: HEMLOCK SEMICONDUCTOR CORPORATION
Reel/Frame 038568/0045 →
Continuity (2)
Provisional Application 62180086 · Jun 16, 2015
Related Publication 20160374144A1 · Dec 22, 2016