Method of filling recess and processing apparatus
A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H 2 gas or NH 3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.
1. A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, comprising:
forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate;
etching the first germanium film with an etching gas containing an excited H 2 gas or NH 3 gas; and
forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.
2. The method of claim 1 , wherein the etching gas is supplied in a plasmized state.
3. The method of claim 1 , further comprising forming a silicon film on a surface of the insulating film before the forming a first germanium film.
4. The method of claim 1 , wherein the germanium raw material gas is a germane-based gas or an aminogermane-based gas.
5. The method of claim 1 , wherein the etching the first germanium film is performed by setting a temperature of the substrate to fall within a range of 200 to 400 degrees C.
6. The method of claim 1 , wherein the etching the first germanium film is performed by setting a pressure to fall within a range of 6.7 to 133 Pa.
7. A processing apparatus for filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on its surface, comprising:
a process vessel configured to accommodate the substrate;
a gas supply part configured to supply a predetermined gas into the process vessel;
an excitation mechanism configured to excite the predetermined gas;
a heating mechanism configured to heat the interior of the process vessel;
an exhaust mechanism configured to exhaust the interior of the process vessel so as to be in a depressurized state; and
a control part configured to control the gas supply part, the excitation mechanism, the heating mechanism, and the exhaust mechanism,
wherein the control part is configured to:
control the interior of the process vessel to be in a predetermined depressurized state by the exhaust mechanism, and control the interior of the process vessel to have a predetermined temperature by the heating mechanism;
form a first germanium film so as to fill the recess by supplying a germanium raw material gas from the gas supply part into the process vessel;
supply an etching gas containing an H 2 gas or an NH 3 gas from the gas supply part and excite the etching gas by the excitation mechanism;
etch the first germanium film with the excited etching gas in the process vessel; and
form a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas from the gas supply part into the process vessel.
8. The apparatus of claim 7 , wherein the excitation mechanism is a plasma generation mechanism.
9. A non-transitory computer-readable storage medium storing a program that operates on a computer and that causes the computer to control a processing apparatus, wherein the program, when executed, causes the computer to control the processing apparatus so as to perform the method of filling a recess of claim 1 .