Semiconductor devices and methods for manufacturing the same
Semiconductor devices and methods for manufacturing the same are disclosed. In an embodiment, a method of manufacturing a semiconductor device may include providing a substrate having a recess; epitaxially forming a first layer including a doped semiconductor material within the recess; and epitaxially forming a second layer including an undoped semiconductor material over at least a portion of the recess.
1. A semiconductor device, comprising:
a substrate having a recess, the substrate having a topmost surface;
a first epitaxial layer in the recess, the first epitaxial layer having a faceted topmost surface, the faceted topmost surface including a central region being substantially parallel to the topmost surface of the substrate and a peripheral region that extends at an obtuse angle relative to the central region, a cross-sectional profile of the faceted topmost surface of the first epitaxial layer being of substantially the same shape as a cross-sectional profile of the recess, the upper surface of the first epitaxial recess forming a second recess within the first epitaxial layer;
a second epitaxial layer in the second recess, the second epitaxial layer having a second faceted topmost surface that has a cross-sectional profile having a different shape than the shape of the second recess and different than the shape of the recess; and
a third epitaxial layer on the second faceted topmost surface of the second epitaxial layer.
2. The semiconductor device of claim 1 , wherein the peripheral region of the faceted topmost surface of the first epitaxial layer has linear sidewalls.
3. The semiconductor device of claim 1 , wherein the second epitaxial layer has a bottommost surface that is conformal to the shape of the topmost faceted surface of the first epitaxial layer.
4. The semiconductor device of claim 1 , wherein the second faceted topmost surface of the second epitaxial layer extends to the topmost surface of the substrate.
5. The semiconductor device of claim 4 , further comprising an undoped epitaxial layer over the third epitaxial layer.
6. The semiconductor device of claim 5 , wherein a thickness of the undoped epitaxial layer is in a range from about 1 nanometer to about 6 nanometers.
7. The semiconductor device of claim 5 , wherein the undoped epitaxial layer comprises silicon.
8. The semiconductor device of claim 1 , wherein an upper surface of the third epitaxial layer is level with the topmost surface of the substrate.
9. A semiconductor device, comprising:
a substrate having a recess, the substrate having a topmost surface, the recess having a planar bottom that extends along a plane;
a first epitaxial layer in the recess, the first epitaxial layer having an uppermost surface a portion of which extends parallel to the plane and a portion of which extends non-parallel to the plane,
a second epitaxial layer in the recess and on the first epitaxial layer, the second epitaxial layer having a faceted top surface that extends linearly from a high point contacting sidewalls of the recess to a low point at a centermost point of the faceted top surface of the second epitaxial layer, the faceted top surface being non-parallel to the plane in all portions; and
an interface between the first epitaxial layer and the second epitaxial layer, the interface having a first portion forming an oblique angle to the topmost surface of the substrate, a second portion substantially parallel to the topmost surface of the substrate, and a third portion extending at an oblique angle to the topmost surface, when viewed in cross-section, the second portion being interposed between the first portion and the third portion.
10. The semiconductor device of claim 9 , further comprising a third epitaxial layer over the second epitaxial layer.
11. The semiconductor device of claim 10 , wherein the third epitaxial layer extends into the recess.
12. The semiconductor device of claim 11 , further comprising a semiconductor layer over the third epitaxial layer.
13. The semiconductor device of claim 12 , wherein the semiconductor layer is undoped.
14. The semiconductor device of claim 12 , wherein a thickness of the semiconductor layer is between about 1 nanometer to about 6 nanometers.
15. The semiconductor device of claim 12 , wherein the semiconductor layer completely covers the third epitaxial layer.
16. A semiconductor device, comprising:
a substrate having a topmost surface; and
a recess, in the substrate, the recess having sidewalls that extend in an oblique direction relative to the topmost surface, the recess being filled with:
a first epitaxial layer having a thickness that linearly increases when moving from a first central region to the sidewalls of the recess;
a second epitaxial layer having an upper surface that extends upwards from a central region to the sidewalls of the recess, wherein an uppermost surface of the first epitaxial layer has a first profile, when viewed in a cross-section and further wherein a bottommost surface of the second epitaxial layer has the first profile and a topmost surface of the second epitaxial layer has a second profile different in size and in shape than the first profile; and
a third epitaxial layer having a thickness that decreases linearly from the central region of the second epitaxial layer to the sidewalls of the recess.
17. The semiconductor device of claim 16 , further comprising an undoped semiconductor layer over the third epitaxial layer.
18. The semiconductor device of claim 17 , wherein the undoped semiconductor layer extends completely over the recess.
19. The semiconductor device of claim 17 , a thickness of the undoped semiconductor layer is between about 1 nanometer to about 6 nanometers.
20. The semiconductor device of claim 16 , wherein an upper surface of the third epitaxial layer is level with the topmost surface of the substrate.