Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
View Patent ↗A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.
1. A method of manufacturing a semiconductor device, the method comprising:
depositing a transition metal dichalcogenide material onto a substrate;
patterning the transition metal dichalcogenide material into one or more fins consisting of the transition metal dichalcogenide material, wherein each one of the one or more fins has a top surface parallel with the substrate and a sidewall extending between the top surface and the substrate;
depositing a gate dielectric layer overlying the one or more fins and in physical contact with the top surface and the sidewall;
depositing a gate electrode layer over the gate dielectric layer;
placing a mask over the gate electrode layer; and
patterning both the gate electrode layer and the gate dielectric layer to remove material exposed by the mask.
2. The method of claim 1 , wherein the depositing the transition metal dichalcogenide material further comprises:
introducing a first precursor material to the substrate; and
introducing a second precursor material to the substrate.
3. The method of claim 1 , wherein the sidewall is perpendicular to the substrate.
4. The method of claim 1 , wherein the sidewall is sloped with respect to the substrate.
5. The method of claim 1 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a plurality of stacked, horizontally orientated layers.
6. The method of claim 1 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a plurality of stacked, vertically orientated layers.
7. The method of claim 1 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a polycrystalline material.
8. A method of manufacturing a semiconductor device, the method comprising:
reacting a first precursor to a second precursor to form a first transition metal dichalcogenide material over a substrate; and
forming a transistor from the first transition metal dichalcogenide material, the forming the transistor comprising:
patterning the first transition metal dichalcogenide material to form a fin consisting of the first transition metal dichalcogenide material;
forming a first gate dielectric in physical contact with and covering at least a portion of each one of exposed multiple sides of the fin
forming a gate electrode layer over the first gate dielectric;
forming a mask over the gate electrode layer; and
patterning both the gate electrode layer and the first gate dielectric to remove material exposed by the mask.
9. The method of claim 8 , wherein the reacting the first precursor to the second precursor forms a blanket layer of the first transition metal dichalcogenide material.
10. The method of claim 8 , wherein the multiple sides are perpendicular to the substrate.
11. The method of claim 8 , wherein the multiple sides are sloped with respect to the substrate.
12. The method of claim 8 , wherein the reacting the first precursor to the second precursor deposits a plurality of stacked, horizontally orientated layers.
13. The method of claim 8 , wherein the reacting the first precursor to the second precursor deposits a plurality of stacked, vertically orientated layers.
14. The method of claim 8 , wherein the reacting the first precursor to the second precursor deposits a polycrystalline material.
15. A method of manufacturing a semiconductor device, the method comprising:
depositing a transition metal dichalcogenide material onto a substrate;
patterning the transition metal dichalcogenide material into two or more fins consisting of the transition metal dichalcogenide material, wherein each one of the two or more fins has a top surface parallel with the substrate and a sidewall extending between the top surface and the substrate;
depositing a gate dielectric layer overlying the two or more fins and in physical contact with the top surface and the sidewall;
depositing a gate electrode layer over the gate dielectric layer;
placing a mask over the gate electrode layer; and
patterning both the gate electrode layer and the gate dielectric layer to remove material exposed by the mask.
16. The method of claim 15 , wherein the sidewall is sloped with respect to the substrate.
17. The method of claim 15 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a plurality of stacked, horizontally orientated layers.
18. The method of claim 15 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a plurality of stacked, vertically orientated layers.
19. The method of claim 15 , wherein the depositing the transition metal dichalcogenide material further comprises depositing a polycrystalline material.
20. The method of claim 15 , wherein the sidewall is perpendicular to the substrate.