Sensor element, image sensor, methods of forming and operating the same
A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.
1. An image sensor comprising:
a plurality of first electrodes for electrically coupling to a first supply voltage;
a plurality of second electrodes for electrically coupling to a second supply voltage;
an oxide dielectric layer between the plurality of first electrodes and the plurality of second electrodes, the oxide dielectric layer comprising a plurality of oxide dielectric elements, each respective oxide dielectric element configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the respective oxide dielectric element;
a detector; and
a lens system for directing the optical light to the plurality of sensor elements;
wherein the plurality of first electrodes is configured to allow the optical light to pass through the plurality of first electrodes to the oxide dielectric layer; and
wherein the detector is configured to detect an increase in the resistance of the respective oxide dielectric element upon the respective oxide dielectric element receiving the optical light.
2. The image sensor according to claim 1 ,
wherein each respective oxide dielectric element is a portion of the oxide dielectric layer between a portion of a corresponding second electrode and a portion of a corresponding first electrode over the portion of the corresponding second electrode.
3. The image sensor according to claim 1 , further comprising:
a plurality of selectors, each of the plurality of selectors electrically coupled to a sensor element.
4. The image sensor according to claim 1 , further comprising:
a colour filter over the plurality of sensor elements.
5. The image sensor according to claim 1 , further comprising:
an antireflection coating layer over the plurality of sensor elements.
6. A method of forming an image sensor, the method comprising:
forming a plurality of first electrodes for electrically coupling to a first supply voltage;
forming a plurality of second electrodes for electrically coupling to a second supply voltage;
forming an oxide dielectric layer between the plurality of first electrodes and plurality of second electrodes, the oxide dielectric layer comprising a plurality of oxide dielectric elements, each respective oxide dielectric element configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the respective oxide dielectric element;
providing a detector; and
forming a lens system for directing the optical light to the plurality of sensor elements;
wherein the plurality of first electrodes is configured to allow the optical light to pass through the plurality of first electrodes to the oxide dielectric layer; and
wherein the detector is configured to detect an increase in the resistance of the respective oxide dielectric element upon the respective oxide dielectric element receiving the optical light.
7. The method according to claim 6 ,
wherein the plurality of first electrodes is formed extending in parallel to one another along a first direction in a first plane; and
wherein the plurality of second electrodes is formed extending in parallel to one another along a second direction in a second plane parallel to the first plane, the second direction perpendicular to the first direction.
8. The method according to claim 6 ,
wherein each of the plurality of first electrodes is transparent.
9. The method according to claim 6 ,
wherein each of the plurality of first electrodes comprises a transparent conductive oxide.
10. The method according to claim 6 ,
wherein each of the plurality of oxide dielectric elements comprises any one oxide selected from a group consisting of zirconium oxide, silicon oxide, hafnium oxide, aluminium oxide, yttrium oxide, scandium oxide, zinc oxide, a bismuth based oxide, and any combination thereof.
11. A method of operating an image sensor, the method comprising:
electrically coupling a plurality of first electrodes to a first supply voltage;
electrically coupling a plurality of second electrodes to a second supply voltage;
forming a conductive filament in each respective oxide dielectric element of the oxide dielectric layer between the plurality of first electrodes and the plurality of second electrodes to decrease a resistance of the respective oxide dielectric element, by applying a potential difference between the first supply voltage and the second supply voltage that exceeds a threshold voltage across the respective oxide dielectric element; and
detecting, by using a detector, an increase in the resistance of the respective oxide dielectric element upon the respective oxide dielectric element receiving an optical light to sense the optical light which passes through the plurality of first electrodes to the oxide dielectric layer;
wherein the optical light is directed to the plurality of sensor elements by a lens system.