Multi-gate semiconductor device and method for forming the same
A multi-gate semiconductor device includes a substrate, a stacked wire structure disposed over the substrate, a gate over the stacked wire structure, and at least a first spacer disposed over two sidewalls of the gate. The gate further includes a gate conductive structure wrapping the stacked wire structure and a gate dielectric layer sandwiched between the gate conductive structure and the stacked wire structure. Further, sidewalls of the gate conductive structure are in contact with the first spacer.
1. A multi-gate semiconductor device comprising:
a substrate;
a stacked wire structure disposed over the substrate;
a gate over the stacked wire structure, the gate comprising:
a gate conductive structure wrapping the stacked wire structure; and
a gate dielectric layer sandwiched between the gate conductive structure and the stacked wire structure;
at least a first spacer disposed over two sidewalls of the gate, wherein sidewalls of the gate conductive structure are in contact with the first spacer; and
a second spacer, wherein the first spacer is sandwiched between the second spacer and the sidewall of the gate conductive structure, and the second spacer comprises an air gap.
2. The multi-gate semiconductor device of claim 1 , wherein the first spacer comprises a conductive material.
3. The multi-gate semiconductor device of claim 2 , wherein the first spacer is separated from the stacked wire structure by the gate dielectric layer.
4. The multi-gate semiconductor device of claim 1 , wherein the gate conductive structure comprises at least a barrier metal layer, a work function metal layer, and a gap-filling metal layer.
5. The multi-gate semiconductor device of claim 4 , wherein the barrier metal layer is in contact with the first spacer.
6. The multi-gate semiconductor device of claim 1 , further comprises a dielectric structure disposed over the substrate, wherein the first spacer is separated from the dielectric structure by the second spacer.
7. A multi-gate semiconductor device comprising:
a substrate;
a stacked wire structure disposed over the substrate;
a gate over the stacked wire structure, the gate comprising:
a gate conductive structure wrapping the stacked wire structure; and
a gate dielectric layer sandwiched between the gate conductive structure and the stacked wire structure; and
at least a conductive spacer disposed over two sidewalls of the gate, wherein sidewalls of the gate conductive structure are in contact with the conductive spacer.
8. The multi-gate semiconductor device of claim 7 , wherein the conductive spacer is separated from the stacked wire structure by the gate dielectric layer.
9. The multi-gate semiconductor device of claim 7 , further comprising an insulating spacer, wherein the conductive spacer is sandwiched between the insulating spacer and the sidewall of the gate conductive structure.
10. The multi-gate semiconductor device of claim 9 , further comprises a dielectric structure disposed over the substrate, wherein the conductive spacer is separated from the dielectric structure by the insulating spacer.
11. The multi-gate semiconductor device of claim 9 , wherein the insulating spacer comprises an air gap.
12. The multi-gate semiconductor device of claim 9 , wherein the insulating spacer comprises silicon nitride (SiN), silicon oxide (SiO), silicon carbide (SiC), silicon oxycarbide (SiOC), or silicon oxycarbon nitride (SiOCN).
13. The multi-gate semiconductor device of claim 7 , wherein the gate conductive structure comprises at least a barrier metal layer, a work function metal layer, and a gap-filling metal layer.
14. The multi-gate semiconductor device of claim 13 , wherein the barrier metal layer is in contact with the conductive spacer.
15. A multi-gate semiconductor device comprising:
a substrate;
a stacked wire structure disposed over the substrate;
a gate conductive structure wrapping the stacked wire structure, wherein the gate conductive structure comprising a barrier metal layer, a work function metal layer, and a gap-filling metal layer;
a gate dielectric layer sandwiched between the barrier metal layer and the stacked wire structure; and
at least a conductive spacer disposed over two sidewalls of the gate wherein conductive structure barrier metal layer of the gate conductive structure is in contact with the conductive spacer.
16. The multi-gate semiconductor device of claim 15 , further comprising an insulating spacer, wherein the conductive spacer is sandwiched between the insulating spacer and the sidewall of the gate conductive structure.
17. The multi-gate semiconductor device of claim 16 , wherein the insulating spacer comprises an air gap.
18. The multi-gate semiconductor device of claim 16 , wherein the insulating spacer comprises silicon nitride (SiN), silicon oxide (SiO), silicon carbide (SiC), silicon oxycarbide (SiOC), or silicon oxycarbon nitride (SiOCN).
19. The multi-gate semiconductor device of claim 15 , further comprises a dielectric structure disposed over the substrate, wherein the conductive spacer is separated from the dielectric structure by the insulating spacer.
20. The multi-gate semiconductor device of claim 15 , wherein the conductive spacer is separated from the stacked wire structure by the gate dielectric layer.