Method of manufacturing lower temperature polycrystal silicon thin film transistor array substrate

1. A method of manufacturing lower temperature polycrystal silicon thin film transistor array substrate, comprising:

A) defining a heavily doped region of a source electrode of an N-channel area, a lightly doped region of the source electrode of the N-channel area, a heavily doped region of a drain electrode of the N-channel area and a lightly doped region of the drain electrode of the N-channel area by using a first photomask having a first pattern;

B) defining a doped region of a source electrode of a P-channel area and a doped region of a drain electrode of the P-channel area by using a second photomask having a second pattern;

C) defining a pixel region, a contact hole region at the heavily doped region of the drain electrode of the N-channel area, a contact hole region at the heavily doped region of the source electrode of the N-channel area, a contact hole region at the heavily doped region of the drain electrode of the P-channel area, and a contact hole region at the heavily doped region of the source electrode of the P-channel area by using a third photomask having a third pattern; and

D) defining a metal electrode region at the heavily doped region of the drain electrode of the N-channel area, a metal electrode region at the heavily doped region of the source electrode of the N-channel area, a metal electrode region at the heavily doped region of the drain electrode of the P-channel area, and a metal electrode region at the heavily doped region of the source electrode of the P-channel area by using a fourth photomask having a fourth pattern;

wherein step B) further comprises:

coating a photoresist on a substrate after performing said step A);

exposing and developing the photoresist by using the second photomask, so as to remove the photoresist between the N-channel area and the P-channel area, and to remove part of the photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

removing a polycrystal silicon layer, a first insulating layer and a first metal layer between the N-channel area and the P-channel area;

removing remaining photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

etching and removing the first metal layer above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

performing ion implantation on the doped region of the source electrode of the P-channel area and the doped region of the drain electrode of the P-channel area; and

removing all remaining photoresist.

2. The method of claim 1 , wherein the first photomask is a greyscale photomask or a halftone photomask.

3. The method of claim 1 , wherein the second photomask is a greyscale photomask or a halftone photomask.

4. The method of claim 1 , wherein the third photomask is a greyscale photomask or a halftone photomask.

5. The method of claim 1 , wherein the fourth photomask is a greyscale photomask or a halftone photomask.

6. The method of claim 1 , wherein step A) further comprises:

forming in sequence a buffer layer, the polycrystal silicon layer, the first insulating layer and the first metal layer on the substrate;

coating a layer of the photoresist on the first metal layer;

exposing and developing the photoresist by using the first photomask, so as to remove the photoresist above the heavily doped region of the source electrode of the N-channel area and above the heavily doped region of the drain electrode of the N-channel area, and to remove part of the photoresist above the lightly doped region of the source electrode and above the lightly doped region of the drain electrode;

etching and removing the first metal layer above the heavily doped region of the source electrode of the N-channel area and above the heavily doped region of the drain electrode of the N-channel area;

performing a first ion implantation on the heavily doped region of the source electrode of the N-channel area and the heavily doped region of the drain electrode of the N-channel area;

removing remaining photoresist above the lightly doped region of the source electrode of the N-channel area and above the lightly doped region of the drain electrode of the N-channel area;

etching and removing the first metal layer above the lightly doped region of the source electrode and the lightly doped region of the drain electrode;

performing a second ion implantation again on the heavily doped region and lightly doped region of the source electrode of the N-channel area as well as the heavily doped region and lightly doped region of the drain electrode of the N-channel area; and

removing all remaining photoresist.

7. The method of claim 2 , wherein step A) further comprises:

forming in sequence a buffer layer, the polycrystal silicon layer, the first insulating layer and the first metal layer on the substrate;

coating a layer of the photoresist on the first metal layer;

exposing and developing the photoresist by using the first photomask, so as to remove the photoresist above the heavily doped region of the source electrode of the N-channel area and above the heavily doped region of the drain electrode of the N-channel area, and to remove part of the photoresist above the lightly doped region of the source electrode and above the lightly doped region of the drain electrode;

etching and removing the first metal layer above the heavily doped region of the source electrode of the N-channel area and above the heavily doped region of the drain electrode of the N-channel area;

performing a first ion implantation on the heavily doped region of the source electrode of the N-channel area and the heavily doped region of the drain electrode of the N-channel area;

removing remaining photoresist above the lightly doped region of the source electrode of the N-channel area and above the lightly doped region of the drain electrode of the N-channel area;

etching and removing the first metal layer above the lightly doped region of the source electrode and the lightly doped region of the drain electrode;

performing a second ion implantation again on the heavily doped region and lightly doped region of the source electrode of the N-channel area as well as the heavily doped region and lightly doped region of the drain electrode of the N-channel area; and

removing all remaining photoresist.

8. The method of claim 1 , wherein the step C) comprises:

forming a second insulating layer, a transparent conductive layer and the photoresist on the substrate after finishing step B);

exposing and developing the photoresist by using the third photomask, so as to remove the photoresist above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, and to remove the photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

removing the first insulating layer, the transparent conductive layer and the second insulating layer above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, as well as above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area, so as to form a contact hole;

removing all photoresist except the photoresist in the pixel region, so as to expose all the other transparent conductive layer than the transparent conductive layer in said pixel region; and

removing the exposed transparent conductive layer.

9. The method of claim 4 , wherein the step C) comprises:

forming a second insulating layer, a transparent conductive layer and the photoresist on the substrate after finishing step B);

exposing and developing the photoresist by using the third photomask, so as to remove the photoresist above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, and to remove the photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

removing the first insulating layer, the transparent conductive layer and the second insulating layer above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, as well as above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area, so as to form a contact hole;

removing all photoresist except the photoresist in the pixel region, so as to expose all the other transparent conductive layer than the transparent conductive layer in said pixel region; and

removing the exposed transparent conductive layer.

10. The method of claim 1 , wherein the step D) comprises:

forming a second metal layer on the substrate after finishing step C);

coating the photoresist on the second metal layer; exposing and developing the photoresist by using the fourth photomask, so as to remove all photoresist except the photoresist above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, and the photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

etching and removing the exposed second metal layer;

removing the photoresist above the heavily doped region of the drain electrode of the N-channel area and the photoresist above doped region of the source electrode of the P-channel area; removing part of the photoresist above the heavily doped region of the source electrode of the N-channel area and removing part of the photoresist above the doped region of the drain electrode of the P-channel area;

forming a passivation layer through deposition; and

removing part of the photoresist above the heavily doped region of the source electrode of the N-channel area and removing part of the photoresist and the passivation layer above the doped region of the drain electrode of the P-channel area.

11. The method of claim 5 , wherein the step D) comprises:

forming a second metal layer on the substrate after finishing step C);

coating the photoresist on the second metal layer; exposing and developing the photoresist by using the fourth photomask, so as to remove all photoresist except the photoresist above the heavily doped region of the drain electrode of the N-channel area and above the heavily doped region of the source electrode of the N-channel area, and the photoresist above the doped region of the source electrode of the P-channel area and above the doped region of the drain electrode of the P-channel area;

etching and removing the exposed second metal layer;

removing the photoresist above the heavily doped region of the drain electrode of the N-channel area and the photoresist above doped region of the source electrode of the P-channel area; removing part of the photoresist above the heavily doped region of the source electrode of the N-channel area and removing part of the photoresist above the doped region of the drain electrode of the P-channel area;

forming a passivation layer through deposition; and

removing part of the photoresist above the heavily doped region of the source electrode of the N-channel area and removing part of the photoresist and the passivation layer above the doped region of the drain electrode of the P-channel area.