IP Library Granted Patent US 10,275,559
Granted Patent B2
US 10,275,559 · App. 15/355,431 · Granted Apr 30, 2019

Method for legalizing mixed-cell height standard cells of IC

Inventors: Chao-Hung Wang (Taipei, TW); Yen-Yi Wu (Taipei, TW); Shih-Chun Chen (Taipei, TW); Yao-Wen Chang (Taipei, TW); Meng-Kai Hsu (Xinfeng Township, Hsinchu County, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G06F17/5072G06F17/5077G06F17/5081
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,275,559
App. No.
15/355,431
Granted
Apr 30, 2019
Kind
B2
Abstract

A method for legalizing mixed-cell height standard cells of an IC is provided. A target standard cell is obtained in a window of a global placement. The target standard cell has a first area overlapping a first standard cell located in a first row of the window, and a second area overlapping a second standard cell located in a second row of the window. The target standard cell and the first standard cell are moved until the target standard cell does not overlap the first standard cell in the first row of the window. The target standard cell and the first standard cell are clustered as a first cluster when the target standard cell does not overlap the first standard cell. The first cluster is moved away from the second standard cell in the second row until the second standard cell does not overlap the first cluster.

Claims (79)

1. A method for legalizing mixed-cell height standard cells of an integrated circuit (IC), comprising:

obtaining a global placement of the IC, wherein a plurality of standard cells of the IC are placed in the global placement;

obtaining a first target standard cell in a window of the global placement, wherein the first target standard cell has a first area overlapping a first standard cell located in a first row of the window, and a second area overlapping a second standard cell located in a second row of the window, wherein the first area is greater than the second area;

moving the first target standard cell and the first standard cell in the first row until the first target standard cell does not overlap the first standard cell in the first row of the window;

clustering the first target standard cell and the first standard cell as a first cluster when the first target standard cell does not overlap the first standard cell in the first row of the window;

moving the first cluster away from the second standard cell in the second row until the second standard cell does not overlap the first cluster in the second row of the window, so as to obtain a detailed placement; and

manufacturing the IC according to the detailed placement.

2. The method as claimed in claim 1 , further comprising:

declustering the first cluster to obtain the first standard cell and the first target standard cell when the second standard cell does not overlap the first cluster in the second row of the window; and

providing the detailed placement according to the window of the global placement.

3. The method as claimed in claim 1 , wherein the first row is adjacent to the second row in the window of the global placement.

4. The method as claimed in claim 1 , wherein the step of obtaining the first target standard cell in the window of the global placement further comprises:

moving each of the standard cells from a position to a nearest row in the global placement;

obtaining a displacement value of each of the moved standard cells; and

determining the window of the global placement according to the displacement values of the moved standard cells in the window and a dead space corresponding to each of the moved standard cells in the window,

wherein the dead space is incapable of placing the standard cell.

5. The method as claimed in claim 1 , further comprising:

obtaining a second target standard cell in the window of the global placement, wherein the second target standard cell has a third area overlapping a third standard cell located in a third row of the window, wherein a cell height of the second target standard cell is higher than that of the third standard cell; and

moving the second target standard cell and the third standard cell in the third row until the second target standard cell does not overlap the third standard cell in the third row of the window.

6. The method as claimed in claim 1 , further comprising:

determining whether the first cluster overlaps a fourth standard cell located in a first position of the first row of the window;

clustering the first cluster and the fourth standard cell as a second cluster when the first cluster overlaps the fourth standard cell in the first row of the window; and

moving the second cluster away from the second standard cell in the second row until the second standard cell does not overlap the second cluster in the second row of the window.

7. The method as claimed in claim 6 , further comprising:

declustering the second cluster to obtain the first cluster and the fourth standard cell when the second standard cell does not overlap the second cluster in the second row of the window; and

moving the fourth standard cell to the first position in the first row of the window.

8. A method for legalizing mixed-cell height standard cells of an integrated circuit (IC), comprising:

obtaining a global placement of the IC, wherein a plurality of standard cells of the IC are placed in the global placement;

obtaining a plurality of specific standard cells from the standard cells in a window of the global placement, wherein each of the specific standard cells has a plurality of areas overlapping the standard cells located in different rows in the window;

selecting a first target standard cell from the specific standard cells, wherein the first target standard cell has a maximum overlapping area of the sum of the areas;

moving a first standard cell away from the first target standard cell in a first row until the first target standard cell does not overlap the first standard cell in the first row of the window, wherein the area overlapping the first standard cell is max for the first target standard cell;

clustering the first target standard cell and the first standard cell as a first cluster when the first target standard cell does not overlap the first standard cell in the first row of the window;

moving the first cluster away from a second standard cell in a second row until the second standard cell does not overlap the first target standard cell of the first cluster in the second row of the window, wherein the first row is different from the second row, so as to obtain a detailed placement; and

manufacturing the IC according to the detailed placement.

9. The method as claimed in claim 8 , further comprising:

declustering the first cluster to obtain the first standard cell and the first target standard cell when the second standard cell does not overlap the first cluster in the second row of the window; and

providing the detailed placement according to the window of the global placement.

10. The method as claimed in claim 8 , wherein the step of obtaining the specific standard cells from the standard cells in the window of the global placement further comprises:

moving each of the standard cells from a position to a nearest row in the global placement;

obtaining a displacement value of each of the moved standard cells; and

determining the window of the global placement according to the displacement values of the moved standard cells in the window and a dead space corresponding to each of the moved standard cells in the window,

wherein the dead space is incapable of placing the standard cell.

11. The method as claimed in claim 8 , further comprising:

obtaining a second target standard cell in the window of the global placement, wherein the second target standard cell has a third area overlapping a third standard cell located in a third row of the window, wherein a cell height of the second target standard cell is higher than that of the third standard cell; and

moving the second target standard cell and the third standard cell in the third row until the second target standard cell does not overlap the third standard cell in the third row of the window.

12. The method as claimed in claim 8 , further comprising:

determining whether the first cluster overlaps a fourth standard cell located in a first position of the first row of the window;

clustering the first cluster and the fourth standard cell as a second cluster when the first cluster overlaps the fourth standard cell in the first row of the window; and

moving the second cluster away from the second standard cell in the second row until the second standard cell does not overlap the second cluster in the second row of the window.

13. The method as claimed in claim 12 , further comprising:

declustering the second cluster to obtain the first cluster and the fourth standard cell when the second standard cell does not overlap the second cluster in the second row of the window; and

moving the fourth standard cell to the first position in the first row of the window.

14. A method for legalizing mixed-cell height standard cells of an integrated circuit (IC), comprising:

obtaining a global placement of the IC, wherein a plurality of standard cells of the IC are placed in the global placement;

obtaining a first target standard cell in a window of the global placement, wherein the first target standard cell has a first area overlapping a first standard cell located in a first row of the window, and a second area overlapping a second standard cell located in a second row of the window, wherein the first area is greater than the second area;

moving the first target standard cell and the first standard cell in the first row until the first target standard cell does not overlap the first standard cell in the first row of the window;

clustering the first target standard cell and the first standard cell as a first cluster when the first target standard cell does not overlap the first standard cell in the first row of the window;

determining whether the first cluster overlaps a third standard cell located in a first position of the first row of the window;

moving the first cluster away from the second standard cell in the second row when the first cluster does not overlap the third standard cell in the first row of the window, until the second standard cell does not overlap the first cluster in the second row of the window, so as to obtain a detailed placement; and

manufacturing the IC according to the detailed placement.

15. The method as claimed in claim 14 , further comprising:

declustering the first cluster to obtain the first standard cell and the first target standard cell when the second standard cell does not overlap the first cluster in the second row of the window; and

providing the detailed placement according to the window of the global placement.

16. The method as claimed in claim 14 , wherein the first row is adjacent to the second row in the window of the global placement.

17. The method as claimed in claim 14 , wherein the step of obtaining the first target standard cell in the window of the global placement further comprises:

moving each of the standard cells from a position to a nearest row in the global placement;

obtaining a displacement value of each of the moved standard cells; and

determining the window of the global placement according to the displacement values of the moved standard cells in the window and a dead space corresponding to each of the moved standard cells in the window,

wherein the dead space is incapable of placing the standard cell.

18. The method as claimed in claim 14 , further comprising:

obtaining a second target standard cell in the window of the global placement, wherein the second target standard cell has a third area overlapping a fourth standard cell located in a third row of the window, wherein a cell height of the second target standard cell is higher than that of the fourth standard cell; and

moving the second target standard cell and the fourth standard cell in the third row until the second target standard cell does not overlap the fourth standard cell in the third row of the window.

19. The method as claimed in claim 14 , further comprising:

clustering the first cluster and the fourth standard cell as a second cluster when the first cluster overlaps the third standard cell in the first row of the window; and

moving the second cluster away from the second standard cell in the second row until the second standard cell does not overlap the second cluster in the second row of the window,

wherein cell height of the first target standard cell is different from that of the first, second and third standard cells.

20. The method as claimed in claim 19 , further comprising:

declustering the second cluster to obtain the first cluster and the third standard cell when the second standard cell does not overlap the second cluster in the second row of the window; and

moving the fourth standard cell to the first position in the first row of the window.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2016
From: WANG, CHAO-HUNG; WU, YEN-YI; CHEN, SHIH-CHUN; CHANG, YAO-WEN; HSU, MENG-KAI
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 040533/0658 →
Continuity (1)
Related Publication 20180144083A1 · May 24, 2018
Cited By (1)
US 12,430,488