Organic light emitting display device and method of manufacturing the same
Disclosed are an organic light emitting display device which may implement high resolution and a method of manufacturing the same. A storage capacitor disposed on a substrate overlaps a plurality of transistors connected to a light emitting element with at least one buffer layer including an organic buffer layer interposed therebetween and, thus, a sufficient process margin may be assured, high resolution may be implemented and yield may be improved.
1. An organic light emitting display device, comprising:
storage capacitors disposed on a substrate;
at least one buffer layer disposed on the storage capacitors;
a plurality of transistors overlapping each of the storage capacitors with at least one buffer layer interposed therebetween;
light emitting elements connected to the transistors;
a low voltage supply line connected to the light emitting elements; and
a high voltage supply line and data lines,
wherein at least one of the low voltage supply line and the high voltage supply line overlaps one of the data lines with the at least one buffer layer interposed therebetween.
2. The organic light emitting display device according to claim 1 , wherein the at least one buffer layer includes an organic buffer layer formed of an organic insulating material.
3. The organic light emitting display device according to claim 1 , wherein the at least one buffer layer includes:
a first inorganic buffer layer disposed on the substrate;
an organic buffer layer disposed on the first inorganic buffer layer and formed of an organic insulating material; and
a second inorganic buffer layer disposed on the organic buffer layer to have the same line width as the organic buffer layer.
4. The organic light emitting display device according to claim 3 , wherein each of the storage capacitors includes:
a storage lower electrode disposed between the substrate and the first inorganic buffer layer; and
a storage upper electrode disposed on the first inorganic buffer layer.
5. The organic light emitting display device according to claim 1 ,
wherein the data lines are disposed in parallel with at least one of the high voltage supply line and the low voltage supply line.
6. The organic light emitting display device according to claim 5 , wherein the transistors include:
a driving transistor connected to the light emitting element; and
a switching transistor connected to the driving transistor,
wherein:
the switching transistor overlaps one of the low voltage supply line and the storage capacitor with the at least one buffer layer interposed therebetween; and
the driving transistor overlaps the other of the low voltage supply line and the storage capacitor with the at least one buffer layer interposed therebetween.
7. A method of manufacturing an organic light emitting display device, comprising:
forming storage capacitors disposed on a substrate;
forming at least one buffer layer disposed on the storage capacitors;
forming a plurality of transistors overlapping each of the storage capacitors with the at least one buffer layer interposed therebetween;
forming light emitting elements connected to the transistors;
forming a low voltage supply line connected to the light emitting elements; and
forming a high voltage supply line and data lines,
wherein at least one of the low voltage supply line and the high voltage supply line overlaps one of the data lines with the at least one buffer layer interposed therebetween.
8. The method according to claim 7 , wherein, in the formation of the at least one buffer layer, an organic buffer layer formed of an organic insulating material is formed on the substrate.
9. The method according to claim 7 , wherein the formation of the at least one buffer layer includes:
forming a first inorganic buffer layer on the substrate;
forming an organic buffer layer formed of an organic insulating material on the first inorganic buffer layer; and
forming a second inorganic buffer layer on the organic buffer layer to have the same line width as the organic buffer layer.
10. The method according to claim 9 , wherein the formation of the storage capacitors includes:
forming storage lower electrodes on the substrate; and
forming storage upper electrodes on the first inorganic buffer layer.
11. The method according to claim 10 , further comprising:
forming the low voltage supply line and the high voltage supply line together with the formation of the storage lower electrodes,
wherein at least one of the low voltage supply line and the high voltage supply line overlaps one of the data lines, wherein the one of the data lines is disposed in parallel with the at least one of the low voltage supply line and the high voltage supply line, with the at least one buffer layer interposed therebetween.
12. The method according to claim 11 , wherein, in the formation of the transistors, a driving transistor connected to the light emitting element and a switching transistor connected to the driving transistor are formed, wherein:
the switching transistor overlaps one of the low voltage supply line and the storage capacitor with the at least one buffer layer interposed therebetween; and
the driving transistor overlaps the other of the low voltage supply line and the storage capacitor with the at least one buffer layer interposed therebetween.