IP Library Granted Patent US 10,276,760
Granted Patent B2
US 10,276,760 · App. 15/198,957 · Granted Apr 30, 2019

Light emitting diode

Inventors: Jae Wan Song (Ansan-si, KR); Jae Hyun Park (Ansan-si, KR); So Mi Park (Ansan-si, KR); Ki Bum Nam (Ansan-si, KR)
Assignee: Seoul Semiconductor Co., Ltd.
H01L33/56H01L33/36H01L33/38H01L33/501H01L33/52H01L33/54H01L33/505H01L33/58
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Quick Facts
Patent No.
US 10,276,760
App. No.
15/198,957
Granted
Apr 30, 2019
Kind
B2
Abstract

Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.

Claims (22)

1. A light emitting diode comprising:

a light emitting diode chip;

a first molding portion covering the light emitting diode chip and having a first index of refraction;

a second molding portion covering the first molding portion and having a second index of refraction,

wherein:

a thickness of an upper side of the second molding portion is less than a thickness of a lateral side of the second molding portion;

the second index of refraction is less than the first index of refraction;

the first molding portion has a flat upper surface and a flat side surface perpendicular to the flat upper surface;

the second molding portion has a flat upper surface and a flat side surface perpendicular to the flat upper surface that cover and directly contact an upper surface and a side surface, respectively, of the first molding portion through conformal coating; and

the second molding portion is formed of a transparent material containing no phosphors.

2. The light emitting diode according to claim 1 , wherein the first molding portion covers an upper surface and a side surface of the light emitting diode chip through conformal coating.

3. The light emitting diode according to claim 1 , wherein the first molding portion comprises phosphors.

4. The light emitting diode according to claim 3 , wherein the phosphors comprise at least one selected from among green phosphors, cyan phosphors, yellow phosphors, and red phosphors.

5. The light emitting diode according to claim 1 , wherein one of the first molding portion and the second molding portion is formed of silicone or glass.

6. The light emitting diode according to claim 1 , wherein a roughness is formed on an upper surface or a side surface of the second molding portion.

7. The light emitting diode according to claim 1 , wherein a roughness is formed on an upper surface or a side surface of the first molding portion.

8. The light emitting diode according to claim 1 , wherein an upper side of the first molding portion has the same thickness as a lateral side thereof.

9. The light emitting diode according to claim 1 , wherein an upper side of the second molding portion has the same thickness as a lateral side thereof.

10. The light emitting diode according to claim 1 , wherein an upper side of the second molding portion has a different thickness than a lateral side thereof.

11. The light emitting diode according to claim 10 , wherein the upper side of the second molding portion has a smaller thickness than the lateral side thereof.

12. The light emitting diode according to claim 1 , wherein the light emitting diode chip comprises a pair of electrode pads formed on a lower surface thereof.

13. The light emitting diode according to claim 1 , wherein the first index of refraction is in a range of about 1.9 to 2.0 and the second index of refraction is about 1.53.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2016
From: SONG, JAE WAN; PARK, JAE HYUN; PARK, SO MI; NAM, KI BUM
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 039467/0802 →
Priority Claims (1)
KR 10-2015-0093540 · Jun 30, 2015 · national
Continuity (1)
Related Publication 20170025590A1 · Jan 26, 2017
Cited By (1)
US 12,713,741