Stable organic photosensitive devices with exciton-blocking charge carrier filters utilizing high glass transition temperature materials
Disclosed herein are stable organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material having a sufficiently high glass transition temperature, e.g., higher than the temperature or temperature range at which the device typically operates, higher than a highest operating temperature of the device, higher than a threshold temperature value, etc. and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
1. An organic photosensitive optoelectronic device comprising:
two electrodes in superposed relation comprising an anode and a cathode;
a photoactive region comprising at least one donor material and at least one acceptor material disposed between the two electrodes to form a donor-acceptor heterojunction, wherein the at least one acceptor material has a Lowest Unoccupied Molecular Orbital energy level (LUMO Acc ) and a Highest Occupied Molecular Orbital energy level (HOMO Acc ); and
an exciton-blocking electron filter disposed between the cathode and the at least one acceptor material, wherein the electron filter comprises a mixture comprising at least one cathode-side wide energy gap material and at least one electron conducting material;
wherein the at least one cathode-side wide energy gap material has:
a Lowest Unoccupied Molecular Orbital energy level (LUMO CS-WG ) smaller than or equal to the LUMO Acc ;
a Highest Occupied Molecular Orbital energy level (HOMO CS-WG ) larger than, equal to, or within 0.3 eV smaller than the HOMO Acc ;
a HOMO CS-WG -LUMO CS-WG energy gap wider than a HOMO Acc -LUMO Acc energy gap; and
a glass transition temperature equal to or greater than 85° C.; and
wherein the at least one electron conducting material has a Lowest Unoccupied Molecular Orbital energy level (LUMO EC ) larger than, equal to, within 0.2 eV smaller than the LUMO Acc .
2. The device of claim 1 , wherein the at least one cathode-side wide energy gap material comprises a material chosen from 3,3′,5,5′-Tetra[(m-pyridyl)-phen-3-yl]biphenyl (BP4mPy), 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), Bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium (BAlq), Tris(8-hydroxy-quinolinato)aluminium (Alq3), Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), 4,40-(1,3-phenylene)bis(2,6-dip-tolylpyridine-3,5-dicarbonitrile) (m-MPyCN), 4,40-(1,3-phenylene)bis(2,6-di(biphenyl-4-yl)pyridine-3,5-dicarbonitrile) (m-PhPyCN), 4,40-(1,3-phenylene)bis(2,6-diphenylpyridine-3,5-dicarbonitrile) (m-PyCN), 6,60-(1,4-phenylene)bis(2-phenyl-4-p-tolylnicotinonitrile)(p-PPtNN), 4,40-(1,4-phenylene)bis(2-phenyl-6-p-tolylnicotinonitrile)(p-PPtNT), and derivatives thereof.
3. The device of claim 1 , wherein the wide energy gap material has a glass transition temperature between 85-200° C.
4. The device of claim 1 , wherein the wide energy gap material has a glass transition temperature between 100-165° C.
5. The device of claim 1 , wherein the HOMO CS-WG is larger than the HOMO Acc , and the LUMO CS-WG is smaller than the LUMO Acc .
6. The device of claim 1 , wherein the LUMO EC is equal to the LUMO Acc .
7. The device of claim 1 , wherein the LUMO EC is larger than the LUMO Acc .
8. The device of claim 1 , wherein the LUMO CS-WG is smaller than the LUMO EC .
9. The device of claim 1 , wherein the at least one electron conducting material comprises a material chosen from subphthalocyanines, subnaphthalocyanines, dipyrrin complexes, BODIPY complexes, perylenes, naphthalenes, fullerenes, functionalized fullerene derivatives, and derivatives thereof.
10. The device of claim 1 , wherein the at least one acceptor material and the at least one electron conducting material comprise the same material.
11. The device of claim 1 , wherein the mixture comprises the at least one cathode-side wide energy gap material and the at least one electron conducting material at a ratio ranging from 10:1 to 1:10 by volume.
12. The device of claim 1 , wherein the mixture comprises the at least one cathode-side wide energy gap material and the at least one electron conducting material ata ratio ranging from 2:1 to 1:2 by volume.
13. The device of claim 1 , wherein the at least one cathode-side wide energy gap material comprises TPBi.
14. The device of claim 1 , wherein the at least one acceptor material comprises a material chosen from subphthalocyanines, subnaphthalocyanines, dipyrrin complexes, BODIPY complexes, perylenes, naphthalenes, fullerenes, functionalized fullerene derivatives, and derivatives thereof.
15. The device of claim 10 , wherein the at least one acceptor material comprises a material chosen from fullerenes and functionalized fullerene derivatives.
16. The device of claim 1 , further comprising at least one cap layer disposed between the exciton-blocking electron filter and the cathode.
17. The device of claim 16 , wherein the at least one cap layer and the at least one cathode-side wide energy gap material comprise the same material.
18. The device of claim 1 , wherein the at least one electron conducting material comprises a material chosen from fullerenes and functionalized fullerene derivatives.
19. The device of claim 18 , wherein the at least one electron conducting material comprises a material chosen from C 60 and C 70 .
20. The device of claim 19 , wherein the at least one cathode-side wide energy gap material comprises a material chosen from BP4mPy, TPBi, BAlq, Alq3, and 3TPYMB.
21. The device of claim 20 , further comprising at least one cap layer disposed between the exciton-blocking electron filter and the cathode, wherein the at least one cap layer comprises a material chosen from BP4mPy, TPBi, BAlq, Alq3, and 3TPYMB.
22. The device of claim 19 , wherein the at least one acceptor material comprises a material chosen from C 60 and C 70 .
23. The device of claim 22 , wherein the at least one cathode-side wide energy gap material comprises TPBi.
24. The device of claim 23 , further comprising at least one cap layer disposed between the exciton-blocking electron filter and the cathode, wherein the at least one cap layer comprises TPBi.
25. The device of claim 24 , wherein the at least one donor material comprises tetraphenyldibenzoperiflanthene (DBP).
26. An organic photosensitive optoelectronic device comprising:
two electrodes in superposed relation comprising an anode and a cathode;
a photoactive region comprising at least one donor material and at least one acceptor material disposed between the two electrodes to form a donor-acceptor heterojunction, wherein the at least one donor material has a Lowest Unoccupied Molecular Orbital energy level (LUMO don ) and a Highest Occupied Molecular Orbital energy level (HOMO don ); and
an exciton-blocking hole filter disposed between the anode and the at least one donor material, wherein the hole filter comprises a mixture comprising at least one anode-side wide energy gap material and at least one hole conducting material;
wherein the at least one anode-side wide energy gap material has:
a Highest Occupied Molecular Orbital energy level (HOMO AS-WG ) energy level larger than or equal to the HOMO don ;
a Lowest Unoccupied Molecular Orbital energy level (LUMO AS-WG ) smaller than, equal to, or within 0.3 eV larger than the LUMO don ;
a HOMO AS-WG -LUMO AS-WG energy gap wider than a HOMO don -LUMO don energy gap; and
a glass transition temperature equal to or greater than 85° C.
27. The device of claim 26 , wherein the at least one anode-side wide energy gap material comprises a material chosen from 3,3′,5,5′-Tetra[(m-pyridyl)-phen-3-yl]biphenyl (BP4mPy), 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), Bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium (BAlq), Tris(8-hydroxy-quinolinato)aluminium (Alq3), Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), 4,40-(1,3-phenylene)bis(2,6-dip-tolylpyridine-3,5-dicarbonitrile) (m-MPyCN), 4,40-(1,3-phenylene)bis(2,6-di(biphenyl-4-yl)pyridine-3,5-dicarbonitrile) (m-PhPyCN), 4,40-(1,3-phenylene)bis(2,6-diphenylpyridine-3,5-dicarbonitrile) (m-PyCN), 6,60-(1,4-phenylene)bis(2-phenyl-4-p-tolylnicotinonitrile) p-PPtNN), 4,40-(1,4-phenylene)bis(2-phenyl-6-p-tolylnicotinonitrile)(p-PPtNT), and derivatives thereof.
28. The device of claim 26 , wherein the wide energy gap material has a glass transition temperature between 85-200° C.
29. The device of claim 26 , wherein the HOMO AS-WG is larger than the HOMO don , and the LUMO AS-WG is smaller than the LUMO don .
30. The device of claim 26 , wherein the HOMO HC is equal to or smaller than the HOMO don .
31. The device of claim 26 , wherein the HOMO AS-WG is larger than the HOMO HC .
32. The device of claim 26 , wherein the at least one donor material comprises a material chosen from phthalocyanines, subphthalocyanines, naphthalocyanines, merocyanine dyes, boron-dipyrromethene (BODIPY) dyes, thiophenes, low band-gap polymers, polyacenes, diindenoperylene (DIP), squaraine (SQ) dyes, tetraphenyldibenzoperiflanthene (DBP), and derivatives thereof.
33. The device of claim 26 , wherein the at least one hole conducting material comprises a material chosen from phthalocyanines, subphthalocyanines, naphthalocyanines, merocyanine dyes, boron-dipyrromethene (BODIPY) dyes, thiophenes, low band-gap polymers, polyacenes, diindenoperylene (DIP), squaraine (SQ) dyes, tetraphenyldibenzoperiflanthene (DBP), and derivatives thereof.