Critical dimension measurements with gaseous adsorption
Methods and systems for performing optical measurements of geometric structures filled with an adsorbate by a gaseous adsorption process are presented herein. Measurements are performed while the metrology target under measurement is treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material adsorbs onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In one aspect, measurement data is collected when a structure is unfilled and when the structure is filled by gaseous adsorption. The collected data is combined in a multi-target model based measurement to reduce parameter correlations and improve measurement performance.
1. A measurement system comprising:
an illumination source configured to provide a first amount of illumination light to one or more geometric shape features of one or more metrology targets disposed on a wafer at a first adsorption state, the one or more geometric shape features characterized by a critical dimension, the one or more geometric shape features shaped by a semiconductor fabrication process;
a vapor injection system configured to provide a gaseous flow including a fill material in a vapor phase to the one or more metrology targets during the illumination of the one or more metrology targets, wherein a portion of the fill material is adsorbed onto the one or more metrology targets in a liquid phase, and wherein the portion of fill material fills at least a portion of the one or more geometric shape features of the one or more metrology targets at the first adsorption state; and
a detector configured to receive a first amount of collected light from the one or more metrology targets in response to the first amount of illumination light and generate a first set of measurement signals indicative of the first amount of collected light.
2. The measurement system of claim 1 , further comprising:
a computing system configured to:
receive the first set of measurement signals; and
estimate a value of the critical dimension of the one or more geometric shape features based at least in part on the first set of measurement signals and a measurement model.
3. The measurement system of claim 2 , wherein the illumination source is further configured to provide a second amount of illumination light to the one or more metrology targets disposed on the wafer at a second adsorption state that is different from the first adsorption state, wherein the detector is further configured to receive a second amount of collected light from the one or more metrology targets in response to the second amount of illumination light and generate a second set of measurement signals indicative of the second amount of collected light, and wherein the computing system is further configured to:
receive the second amount of measurement signals; and
estimate a value of the critical dimension of the one or more geometric shape features based at least in part on the first and second sets of measurement signals and a multi-target measurement model.
4. The measurement system of claim 3 , wherein the first amount of illumination light is provided to the one or more metrology targets at a first partial pressure of the fill material and the second amount of illumination light is provided to the one or more metrology targets is performed at a second partial pressure of the fill material.
5. The measurement system of claim 4 , wherein the second partial pressure of the fill material is approximately zero.
6. The measurement system of claim 3 , wherein the first amount of illumination light is provided to the one or more metrology targets while the fill material is a first fill material and the second amount of illumination light is provided to the one or more metrology targets while the fill material is a second fill material.
7. The measurement system of claim 2 , wherein the estimating of the value of the parameter of interest involves any of a model-based regression, a model-based library search, a model-based library regression, image-based analysis, and a signal response metrology model.
8. The measurement system of claim 1 , wherein the vapor injection system comprises:
a bubbler including a liquid fill material at a first temperature, wherein a portion of the liquid fill material vaporizes into the gaseous flow provided to the one or more metrology targets, wherein the one or more metrology targets are at a second temperature, higher than the first temperature.
9. The measurement system of claim 1 , wherein the vapor injection system comprises:
a bubbler including an involatile solute dissolved in a liquid fill material, wherein a portion of the liquid fill material vaporizes into the gaseous flow provided to the one or more metrology targets.
10. The measurement system of claim 1 , wherein the fill material is any of water, ethanol, and toluene.
11. The measurement system of claim 1 , wherein the fill material includes multiple, different materials.
12. The measurement system of claim 1 , wherein the first amount of illumination light is provided to the one or more metrology targets when an adsorption process has reached a steady state.
13. The measurement system of claim 1 , wherein the first amount of illumination light is provided to the one or more metrology targets before an adsorption process has reached a steady state.
14. The measurement system of claim 1 , wherein the illumination source and the detector are configured as any of a spectroscopic ellipsometer, a spectroscopic reflectometer, a beam profile reflectometer, a beam profile ellipsometer, or any combination thereof.
15. The measurement system of claim 1 , wherein the first amount of illumination includes wavelengths in a range between 120 nanometers and 190 nanometers.
16. A method comprising:
providing a first amount of illumination light to one or more geometric shape features of one or more metrology targets disposed on a wafer at a first adsorption state, the one or more geometric shape features characterized by a critical dimension, the one or more geometric shape features shaped by a semiconductor fabrication process;
providing a gaseous flow including a fill material in a vapor phase to the one or more metrology targets during the illumination of the one or more metrology targets, wherein a portion of the fill material is adsorbed onto the one or more metrology targets in a liquid phase, and wherein the portion of fill material fills at least a portion of the one or more geometric shape features of the one or more metrology targets at the first adsorption state;
receiving a first amount of collected light from the one or more metrology targets in response to the first amount of illumination light; and
communicating a first set of measurement signals indicative of the first amount of collected light.
17. The method of claim 16 , further comprising:
receiving the first set of measurement signals; and
estimating a value of the critical dimension of the one or more geometric shape features based at least in part on the first set of measurement signals and a measurement model.
18. The method of claim 16 , further comprising:
providing a second amount of illumination light to the one or more metrology targets disposed on the wafer at a second adsorption state that is different from the first adsorption state;
receiving a second amount of collected light from the one or more metrology targets in response to the second amount of illumination light;
generating a second set of measurement signals indicative of the second amount of collected light; and
estimating a value of the critical dimension of the one or more geometric shape features based at least in part on the first and second sets of measurement signals and a multi-target measurement model.
19. The method of claim 18 , wherein the first amount of illumination light is provided to the one or more metrology targets at a first partial pressure of the fill material and the second amount of illumination light is provided to the one or more metrology targets at a second partial pressure of the fill material.
20. The method of claim 18 , wherein the first amount of illumination light is provided to the one or more metrology targets while the fill material is a first fill material and the second amount of illumination light is provided to the one or more metrology targets while the fill material is a second fill material.
21. The method of claim 16 , wherein the providing the gaseous flow involves:
bubbling a purge gas through a bath of the liquid fill material at a first temperature, wherein a portion of the bath of the liquid fill material vaporizes into the gaseous flow provided to the one or more metrology targets, wherein the one or more metrology targets are at a second temperature, higher than the first temperature.
22. The method of claim 16 , wherein the providing the gaseous flow involves:
bubbling a purge gas through a bath that includes an involatile solute dissolved in the liquid fill material, wherein a portion of the liquid fill material vaporizes into the gaseous flow provided to the one or more metrology targets.
23. The method of claim 16 , wherein the fill material is any of water, ethanol, and toluene.
24. The method of claim 16 , wherein the fill material includes multiple, different materials.
25. The method of claim 16 , wherein the first amount of illumination light is provided to the one or more metrology targets when an adsorption process has reached a steady state.
26. The method of claim 16 , wherein the first amount of illumination light is provided to the one or more metrology targets before an adsorption process has reached a steady state.
27. The method of claim 16 , further comprising:
adjusting a degree of saturation of the vaporized fill material such that any spaces between the one or more geometric, structural features below a desired maximum feature size are filled.
28. The method of claim 27 , wherein the adjusting of the degree of saturation involves controlling a temperature difference between the one or more metrology targets and a liquid bath of the fill material.
29. A method comprising:
providing a first gaseous flow including a fill material in a vapor phase to one or more metrology targets under measurement by an optical measurement system, wherein a portion of the fill material is adsorbed onto the one or more metrology targets in a liquid phase, and wherein the portion of fill material fills at least a portion of one or more geometric shape features of the one or more metrology targets at a first adsorption state, the one or more geometric shape features characterized by a critical dimension, the one or more geometric shape features shaped by a semiconductor fabrication process;
providing a second gaseous flow to the one or more metrology targets under measurement by the optical measurement system at a second adsorption state; and
estimating a value of the critical dimension of the one or more metrology targets based at least in part on the first set of optical measurement signals detected from the one or more metrology targets by the optical measurement system at the first adsorption state, a second set of optical measurement signals detected from the one or more metrology targets by the optical measurement system at the second adsorption state, and a multi-target measurement model.
30. The method of claim 29 , wherein the providing the first gaseous flow involves providing the fill material in a vapor phase at a first partial pressure to the one or more metrology targets, and wherein the providing the second gaseous flow involves providing the fill material in a vapor phase at a second partial pressure to the one or more metrology targets.
31. The method of claim 29 , wherein the providing the second gaseous flow involves providing a second fill material in a vapor phase to the one or more metrology targets, wherein the second fill material is different from the fill material.