Magnetic Tunnel Junction Memory Device
View Patent ↗Various memory devices and associated methods of operation are disclosed herein. An exemplary method includes flowing a current through an electrode of a memory device. The current exerts a spin-torque for orienting a magnetic field of a magnetic layer of the memory device and produces a magnetic field in the electrode that assists in orienting the magnetic field of the magnetic layer. The current can produce the magnetic field in the electrode when flowing through a region of the electrode having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device. In some implementations, flowing the current through the electrode includes storing data in the memory device.
1. A method comprising:
flowing a current through an electrode of a memory device, wherein the current:
exerts a spin-torque for orienting a magnetic field of a magnetic layer of the memory device, and
produces a magnetic field in the electrode that assists in orienting the magnetic field of the magnetic layer.
2. The method of claim 1 , wherein the orienting the magnetic field includes inducing a magnetic orientation that is substantially parallel to a longitudinal axis of the memory device.
3. The method of claim 1 , wherein:
the memory device is a magnetic tunnel junction device and the magnetic layer is a free layer of the magnetic tunnel junction device; and
the orienting the magnetic field includes inducing a magnetic orientation that is substantially parallel to and in substantially the same direction as a magnetic orientation of a magnetic field of a pinned layer of the magnetic tunnel junction device.
4. The method of claim 1 , wherein:
the memory device is a magnetic tunnel junction device and the magnetic layer is a free layer of the magnetic tunnel junction device; and
the orienting the magnetic field includes inducing a magnetic orientation that is substantially parallel to and in substantially the opposite direction as a magnetic orientation of a magnetic field of a pinned layer of the magnetic tunnel junction device.
5. The method of claim 1 , wherein the current produces the magnetic field in the electrode when flowing through a region of the electrode having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device.
6. The method of claim 5 , wherein the region has a partially circular shape.
7. The method of claim 5 , wherein the region has a partially rectangular shape.
8. The method of claim 5 , wherein the region has a partially circular shape having piecewise linear segments.
9. A method comprising:
providing a memory device having:
a first electrode,
a first magnetic layer disposed over the first electrode,
a second magnetic layer disposed over the first magnetic layer,
a barrier layer disposed between the first magnetic layer and the second magnetic layer, and
a second electrode disposed over the second magnetic layer; and
flowing a current through the second electrode, wherein the current:
exerts a spin-torque for orienting a magnetic field of the second magnetic layer of the memory device, and
produces a magnetic field in the second electrode that assists in orienting the magnetic field of the second magnetic layer.
10. The method of claim 9 , wherein the flowing the current through the second electrode includes:
generating a first current to flow through the second electrode in a first direction to establish a first magnetic orientation of the magnetic field in the second magnetic layer; and
generating a second current to flow through the second electrode in a second direction to establish a second magnetic orientation of the magnetic field in the second magnetic layer, wherein the second direction is opposite the first direction and the second magnetic orientation is opposite the first magnetic orientation.
11. The method of claim 10 , wherein:
the first magnetic orientation is substantially parallel to and in substantially the same direction as a magnetic orientation in the first magnetic layer; and
the second magnetic orientation is substantially parallel to and in substantially the opposite direction as the magnetic orientation in the first magnetic layer.
12. The method of claim 9 , wherein the second electrode includes a portion having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device.
13. The method of claim 9 , wherein the flowing the current through the second electrode includes storing data in the memory device.
14. The method of claim 13 , wherein the storing the data in the memory device includes storing a first data value when flowing the current through the second electrode along a first direction and storing a second data value when flowing the current through the second electrode along a second direction that is different than the first direction.
15. A method comprising:
providing a memory device having:
a first electrode,
a pinned layer disposed over the first electrode,
a free layer disposed over the pinned layer,
a barrier layer disposed between the pinned layer and the free layer, and
a second electrode disposed over the free layer; and
flowing a current through the second electrode, wherein the current:
exerts a spin-torque for orienting a magnetic field of the free layer, and
produces a magnetic field in the second electrode that assists in orienting the magnetic field of the free layer.
16. The method of claim 15 , wherein the flowing the current through the second electrode includes:
generating a first current to flow through the second electrode in a first direction to establish a first magnetic orientation of the magnetic field in the free layer; and
generating a second current to flow through the second electrode in a second direction to establish a second magnetic orientation of the magnetic field in the free layer, wherein the second direction is opposite the first direction and the second magnetic orientation is opposite the first magnetic orientation.
17. The method of claim 16 , wherein the establishing the first magnetic orientation of the magnetic field in the free layer includes storing a first data value and the establishing the second magnetic orientation of the magnetic field in the free layer includes storing a second data value that is different than the first data value.
18. The method of claim 16 , wherein the first magnetic orientation and the second magnetic orientation are substantially parallel to a longitudinal axis of the memory device.
19. The method of claim 15 , further comprising reading a data value stored by the memory device.
20. The method of claim 19 , wherein the reading the data value stored by the memory device includes measuring a resistance when an electric potential is applied between the first electrode and the second electrode.