Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereof
A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.
1. A semiconductor structure, comprising:
a substrate having a base;
a plurality of fin shaped structures protruding from the base;
a trench recessed from the base of the substrate; and
a first bump disposed within the trench and protruding from a bottom surface of the trench, wherein a width of the first bump is larger than a width of each of the fin shaped structures.
2. The semiconductor structure according to claim 1 , wherein the width of the first bump is larger than a pitch of the fin shaped structures.
3. The semiconductor structure according to claim 1 , wherein the width of the first bump is larger than triple the width of each of the fin shaped structures.
4. The semiconductor structure according to claim 1 , wherein the trench comprises a plurality of sub trenches, and the first bump is disposed between the sub trenches.
5. The semiconductor structure according to claim 4 , wherein a width of each of the sub trenches is smaller than a pitch of the fin shaped structures and larger than the width of each of the fin shaped structures.
6. The semiconductor structure according to claim 1 , further comprising a plurality of second bumps disposed within the trench and protruding from the bottom surface of the trench, wherein a topmost portion of each of the second bumps is lower than the base, and a width of each of the second bumps is smaller than the width of the first bump.
7. The semiconductor structure according to claim 6 , wherein the first bump is disposed between the second bumps.
8. The semiconductor structure according to claim 6 , wherein the trench comprises a plurality of sub trenches, and each of the second bumps is disposed between the sub trenches.
9. The semiconductor structure according to claim 1 , wherein a width of the trench is larger than five times a pitch of the fin shaped structures.
10. The semiconductor structure according to claim 1 , wherein the trench is disposed between the fin shaped structures.
11. A manufacturing method of a semiconductor structure, comprising:
providing a substrate having a base and a plurality of fin shaped structures formed on the base; and
removing the fin shaped structures in a predetermined region for forming:
a trench recessed from the base of the substrate; and
a first bump within the trench and protruding from a bottom surface of the trench, wherein a width of the first bump is larger than a width of each of the fin shaped structures.
12. The manufacturing method according to claim 11 , wherein the predetermined region comprises a first region and a second region, and the step of removing the fin shaped structures in the predetermined region comprises:
performing a first etching process for removing the fin shaped structures in the first region; and
performing a second etching process for removing the fin shaped structures in the second region after the first etching process.
13. The manufacturing method according to claim 12 , wherein the first region is located at two opposite sides of the second region.
14. The manufacturing method according to claim 12 , further comprising:
forming a plurality of sub trenches recessed from the base of the substrate by the first etching process, wherein the first bump is formed between the sub trenches.
15. The manufacturing method according to claim 14 , wherein a width of each of the sub trenches is smaller than a pitch of the fin shaped structures and larger than the width of each of the fin shaped structures.
16. The manufacturing method according to claim 14 , further comprising:
forming a plurality of second bumps by the first etching process, wherein each of the second bumps is formed between the sub trenches, and the first bump is formed between the second bumps.
17. The manufacturing method according to claim 16 , wherein a topmost portion of each of the second bumps is lower than the base, and a width of each of the second bumps is smaller than the width of the first bump.
18. The manufacturing method according to claim 12 , wherein the first bump is formed in the second region and formed by the second etching process.
19. The manufacturing method according to claim 11 , wherein the width of the first bump is larger than a pitch of the fin shaped structures.
20. The manufacturing method according to claim 11 , wherein the width of the first bump is larger than triple the width of each of the fin shaped structures.