Metal gate structure and methods thereof
Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.
1. A method of semiconductor device fabrication, comprising:
forming a first fin and a second fin on a substrate, the first fin having a first gate region and the second fin having a second gate region;
forming a metal-gate line over the first and second gate regions, wherein the metal-gate line extends from the first fin to the second fin; and
performing a line-cut process to separate the metal-gate line into a first gate line and a second gate line, wherein the line-cut process includes:
forming a patterned hard mask over the metal-gate line, wherein the patterned hard mask defines an opening;
after forming the patterned hard mask with an opening, performing a first etch through the opening to remove a first portion of a plurality of metal layers of the metal-gate line;
after the first etch, performing a second etch to remove a second portion of the metal-gate line, the second portion including a region of at least one metal layer of the plurality of metal layers; and
after the second etch, performing a third etch to remove a third portion of the metal-gate line, the third portion including a residual portion of a gate dielectric layer.
2. The method of claim 1 , wherein the first etch is a dry etch, the second etch is a dry etch, and the third etch is a wet etch.
3. The method of claim 1 , wherein the first etch is an anisotropic etch and the second etch is an isotropic etch.
4. The method of claim 1 , wherein the second etch removes a residual portion of the at least one metal layer of the plurality of metal layers of the metal-gate line, the at least one metal layer being disposed directly on the gate dielectric layer.
5. The method of claim 4 , wherein the at least one metal layer includes titanium nitride.
6. The method of claim 5 , wherein the at least one metal layer further includes silicon.
7. The method of claim 1 , wherein the third etch removes the third portion of the metal-gate line that includes a residual portion of a gate dielectric layer.
8. The method of claim 7 , wherein the residual portion of the gate dielectric layer is hafnium oxide.
9. A method, comprising:
forming a metal gate structure in a trench over a substrate, wherein the forming the metal gate structure includes:
forming a gate dielectric layer;
forming a first metal layer over the gate dielectric layer; and
forming a second metal layer over the first metal layer; and
performing a cut gate process on the metal gate structure to form a first portion of the metal gate structure and a second portion of the metal gate structure, the first and second portions having a cut region therebetween, wherein the performing the cut gate process includes:
performing a first etching process to remove a first region of the second metal layer, a first region of the first metal layer and a first region of the gate dielectric layer;
performing a second etching process to remove a second region of the first metal layer; and
performing a third etching process to remove a second region of the gate dielectric layer.
10. The method of claim 9 , further comprising: forming a dielectric material in the cut region after the performing the third etching process.
11. The method of claim 9 , wherein the second metal layer is completely removed from the cut region by the first etching process.
12. The method of claim 11 , wherein the first metal layer is completely removed from the cut region by a combination of the first etching process and the second etching process.
13. The method of claim 12 , wherein the gate dielectric layer is completely removed from the cut region by a combination of the first etching process, the second etching process, and the third etching process.
14. The method of claim 9 , wherein the second etching process is selective to the first metal layer.
15. The method of claim 9 , wherein the third etching process is selective to the gate dielectric layer.
16. A method, comprising:
forming a metal gate structure over a substrate, wherein the metal gate structure includes a gate dielectric layer and a plurality of metal layers; and
performing a cut gate process on the metal gate structure to form a first portion of the metal gate structure and a second portion of the metal gate structure, the first portion and the second portion having a space therebetween, wherein the performing the cut gate process includes:
performing a first etching process to remove a first region of each of the plurality of metal layers;
performing a second etching process to remove a second region of at least one of the plurality of metal layers; and
performing a third etching process to remove a residual region of the gate dielectric layer.
17. The method of claim 16 , wherein the performing the first etching process removes a first region of the gate dielectric layer, the first region not including the residual region.
18. The method of claim 16 , wherein at least another one of the plurality of metal layers is completely removed from the space by the first etching process.
19. The method of claim 16 , wherein the at least one of the plurality of metal layers is completely removed from the space by a combination of the first etching process and the second etching process.
20. The method of claim 16 , further comprising: filling the space with a dielectric material after the third etching process.