IP Library Granted Patent US 10,283,540
Granted Patent B2
US 10,283,540 · App. 15/857,695 · Granted May 7, 2019

Image sensor and method for fabricating the same

Inventors: Yun Ki Lee (Seoul, KR); Min Wook Jung (Yongin-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L27/1462H01L27/1464H01L27/14621H01L27/14627H01L27/14636H01L27/14645H01L27/14685H01L27/14614
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,283,540
App. No.
15/857,695
Granted
May 7, 2019
Kind
B2
Abstract

An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Claims (51)

1. An image sensor comprising:

a substrate comprising a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data;

a photoelectric conversion layer disposed in the light-receiving region of the substrate;

an anti-reflection layer disposed on the photoelectric conversion layer and comprising a plurality of subsidiary anti-reflection layers;

a microlens disposed on the anti-reflection layer;

a delamination-preventing layer disposed in the pad region of the substrate; and

a wiring layer disposed on the delamination-preventing layer,

wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition;

wherein the pad region comprises a recess, and

wherein the wiring layer is disposed directly on the delamination-preventing layer in the recess.

2. The image sensor according to claim 1 , wherein an uppermost one of the subsidiary anti-reflection layers of the anti-reflection layer is substantially the same layer as the delamination-preventing layer.

3. The image sensor according to claim 1 , wherein an uppermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a third material composition different from the second material composition of the delamination-preventing layer.

4. The image sensor according to claim 1 , wherein a lower surface of the anti-reflection layer and a lower surface of the delamination-preventing layer are disposed in a substantially same plane.

5. The image sensor according to claim 1 , further comprising:

a color filter layer interposed between the anti-reflection layer and the microlens.

6. The image sensor according to claim 1 , further comprising:

a conductive pad disposed on the wiring layer.

7. The image sensor according to claim 1 , further comprising:

a plug, wherein the plug penetrates through the substrate and the delamination-preventing layer of the pad region to be connected to the wiring layer.

8. An image sensor comprising:

a substrate comprising a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, and the pad region comprises a recess;

a photoelectric conversion layer disposed on the light-receiving region of the substrate;

an anti-reflection layer disposed on the photoelectric conversion layer;

a microlens disposed on the anti-reflection layer;

a delamination-preventing layer disposed on the substrate of the pad region;

a wiring layer disposed on the delamination-preventing layer in the recess; and a conductive pad disposed on the wiring layer and buried in the recess, wherein the anti-reflection layer includes a material composition not included in the delamination-preventing layer;

wherein the anti-reflection layer comprises a plurality of subsidiary anti-reflection layers, and

wherein a lowermost one of the subsidiary anti-reflection layers and the delamination-preventing layer comprise different material compositions.

9. The image sensor according to claim 8 , wherein the anti-reflection layer comprises a plurality of subsidiary anti-reflection layers, and

wherein a material composition of an uppermost one of the subsidiary anti-reflection layers is identical to a material composition of the delamination-preventing layer.

10. The image sensor according to claim 8 , wherein the anti-reflection layer comprises a plurality of subsidiary anti-reflection layers, and

wherein an uppermost one of the subsidiary anti-reflection layers and the delamination-preventing layer comprise different material compositions.

11. The image sensor according to claim 8 , wherein the delamination-preventing layer is disposed conformally on the recess.

12. The image sensor according to claim 8 , wherein a lower surface of the anti-reflection layer is positioned higher in a first direction than a position of a lower surface of the delamination-preventing layer on the recess in the first direction.

13. The image sensor according to claim 8 , further comprising:

a color filter layer interposed between the anti-reflection layer and the microlens.

14. An image sensor comprising:

a photoelectric conversion layer disposed on a light-receiving region of a substrate, wherein the light-receiving region receives light to generate image data;

an anti-reflection layer disposed on the photoelectric conversion layer;

a microlens disposed on the anti-reflection layer;

a delamination-preventing layer disposed on a pad region of the substrate;

a wiring layer disposed on the delamination-preventing layer; and

a conductive pad disposed on the wiring layer,

wherein the anti-reflection layer includes material composition for preventing reflection of incident light and the delamination-preventing layer includes material composition for preventing delamination of the wiring layer;

wherein the pad region comprises a recess, and

wherein the wiring layer is disposed directly on the delamination-preventing layer in the recess.

15. The image sensor according to claim 14 , wherein the anti-reflection layer comprises a first subsidiary anti-reflection layer disposed on the photoelectric conversion layer, and

a second subsidiary anti-reflection layer disposed on the first subsidiary anti-reflection layer.

16. The image sensor according to claim 15 , wherein the first subsidiary anti-reflection layer and the delamination-preventing layer comprise different material compositions.

17. The image sensor according to claim 15 , wherein the second subsidiary anti-reflection layer and the delamination-preventing layer comprise the same material composition.

18. The image sensor according to claim 15 , wherein the first subsidiary anti-reflection layer and the second subsidiary anti-reflection layer are disposed on the pad region of the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 9, 2018
From: LEE, YUN KI; JUNG, MIN WOOK
To: SAMSUNG ELECTRONICS CO., LTD
Reel/Frame 044574/0052 →
Priority Claims (1)
KR 10-2016-0183315 · Dec 30, 2016 · national
Continuity (1)
Related Publication 20180190690A1 · Jul 5, 2018