Electronic device including topological insulator and transition metal oxide
An electronic device may include a topological insulating layer including first and second surfaces facing each other and a transition metal oxide layer provided on the first surface of the topological insulating layer. The topological insulating layer may have a thickness ranging from 1 nm to 10 nm.
1. An electronic device, comprising:
a topological insulating layer including first and second surfaces facing each other; and
a transition metal oxide layer provided on the first surface of the topological insulating layer,
wherein the transition metal oxide layer comprises a first sub-oxide layer and a second sub-oxide layer, the first sub-oxide layer being positioned between the topological insulating layer and the second sub-oxide layer, and
wherein a density of oxygen vacancies in the second sub-oxide layer is greater than a density of oxygen vacancies in the first sub-oxide layer.
2. The electronic device of claim 1 , wherein the topological insulating layer has a thickness ranging from 1 nm to 10 nm.
3. The electronic device of claim 1 , wherein the topological insulating layer contains a compound represented by a chemical formula A X B Y C Z D W , where 0<X≤10, 0<Y≤10, 0<Z≤10, and 0<W≤10,
wherein each of A and B is Bi, Sb, Ti, Pb, Sn, In, Ga, or Ge, and
each of C and D is Se, Te, or S.
4. The electronic device of claim 1 , wherein the transition metal oxide layer is in contact with the first surface.
5. The electronic device of claim 1 , further comprising: a gate electrode provided on the transition metal oxide layer,
wherein the gate electrode is configured to apply a voltage to the transition metal oxide layer.
6. The electronic device of claim 5 , wherein a density of oxygen vacancies in the transition metal oxide layer is controlled by the voltage.
7. The electronic device of claim 5 , wherein a charge state of oxygen vacancies in the transition metal oxide layer is controlled by the voltage.
8. The electronic device of claim 1 , further comprising: first and second source/drain electrodes provided on the second surface;
wherein the second surface comprises a portion that is located between the first and second source/drain electrodes and is used as a channel region; and
the transition metal oxide layer is overlapped with at least a portion of the channel region, when viewed in a plan view.
9. The electronic device of claim 1 , further comprising: first and second source/drain electrodes provided on the first surface,
wherein the first and second source/drain electrodes are spaced apart from each other with the transition metal oxide layer interposed therebetween.
10. An electronic device, comprising:
a topological insulating layer having a surface, a portion of which is used as a channel region;
a transition metal oxide layer overlapped with the channel region, when viewed in a plan view; and
a gate electrode provided on the transition metal oxide layer,
wherein the gate electrode is configured to apply a voltage to the transition metal oxide layer,
wherein the transition metal oxide layer comprises a first sub-oxide layer and a second sub-oxide layer, the first sub-oxide layer being positioned between the topological insulating layer and the second sub-oxide layer, and
wherein a density of oxygen vacancies in the second sub-oxide layer is greater than a density of oxygen vacancies in the first sub-oxide layer.
11. The electronic device of claim 10 , wherein the topological insulating layer has a thickness ranging from 1 nm to 10 nm.
12. The electronic device of claim 10 , wherein resistance of the channel region is controlled by the voltage.
13. The electronic device of claim 12 , wherein a density of oxygen vacancies in the transition metal oxide layer is controlled by the voltage.
14. The electronic device of claim 12 , wherein a charge state of oxygen vacancies in the transition metal oxide layer is controlled by the voltage.
15. An electronic device, comprising:
a topological insulating layer including first and second surfaces facing each other; and
a transition metal oxide layer provided on the first surface of the topological insulating layer,
wherein the transition metal oxide layer comprises a first sub-oxide layer and a second sub-oxide layer, the second sub-oxide layer being positioned between the topological insulating layer and the first sub-oxide layer, and
wherein a density of oxygen vacancies in the second sub-oxide layer is greater than a density of oxygen vacancies in the first sub-oxide layer.
16. The electronic device of claim 15 , wherein the transition metal oxide layer is in contact with the first surface.
17. The electronic device of claim 15 , further comprising: a gate electrode provided on the transition metal oxide layer,
wherein the gate electrode is configured to apply a voltage to the transition metal oxide layer.