Semiconductor device and method for manufacturing the same
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of Al x1 Ga 1-x1 N (0<x1<1) or p-type Al z1 Ga 1-z1 N (0≤z1<1) and has a first surface, a second surface, and a third surface. The second layer includes Al x2 Ga 1-x2 N (0≤x2<1 and x2<x1) and includes a first partial region, a second partial region, and a third partial region. The third layer includes Al x3 Ga 1-x3 N (0<x3<1 and x2<x3) and includes a fourth partial region, a fifth partial region, and a sixth partial region.
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a third electrode, a position of the third electrode in a first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first layer including at least one of Al x1 Ga 1-x1 N (0<x1<1) or p-type Al z1 Ga 1-z1 N (0≤z1<1) and having a first surface, a second surface, and a third surface, the first surface being separated from the first electrode in a second direction crossing the first direction, the second surface being separated from the second electrode in the second direction and aligned with a first plane including the first surface, the third surface being separated from the third electrode in the second direction and tilted with respect to the first plane;
a second layer including Al x2 Ga 1-x2 N (0≤x2<1 and x2<x1) and including a first partial region, a second partial region, and a third partial region, the first partial region being provided between the first electrode and the first surface in the second direction, the second partial region being provided between the second electrode and the second surface in the second direction, the third partial region being provided between the third electrode and the third surface in the second direction;
a third layer including Al x3 Ga 1-x3 N (0<x3<1 and x2<x3) and including a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being provided between the first electrode and the first partial region in the second direction, the fifth partial region being provided between the second electrode and the second partial region in the second direction, the sixth partial region being provided between the third electrode and the third partial region in the second direction, the fourth partial region being electrically connected to the first electrode, the fifth partial region being electrically connected to the second electrode; and
an insulating layer provided between the third electrode and the sixth partial region in the second direction.
2. The device according to claim 1 , wherein an absolute value of an angle between the first surface and a c-plane of the first layer is less than an absolute value of an angle between the third surface and the c-plane.
3. The device according to claim 1 , wherein
the first surface and the second surface are aligned with a c-plane of the first layer, and
the third surface is tilted with respect to the c-plane.
4. The device according to claim 1 , wherein
an absolute value of an angle between the first surface and a c-plane of the first layer is 5 degrees or less, and
an absolute value of an angle between the third surface and the c-plane of the first layer is not less than 10 degrees and not more than 80 degrees.
5. The device according to claim 1 , wherein
the third electrode has a third electrode surface opposing the insulating layer, and
the third electrode surface is aligned with a third plane including the third surface.
6. The device according to claim 1 , wherein
the insulating layer has a first insulating layer surface opposing the third surface, and
the first insulating layer surface is aligned with a third plane including the third surface.
7. The device according to claim 6 , wherein
the insulating layer has a second insulating layer surface opposing the third electrode, and
the second insulating layer surface is aligned with the third plane.
8. The device according to claim 1 , wherein
the third layer has a third layer surface opposing the third surface, and
the third layer surface is aligned with a third plane including the third surface.
9. The device according to claim 1 , wherein
the second layer has a second layer surface opposing the third surface, and
the second layer surface is aligned with a third plane including the third surface.
10. The device according to claim 1 , wherein a third thickness of the third partial region along a third direction perpendicular to the third surface is thinner than a second thickness of the second partial region along the second direction.
11. The device according to claim 10 , wherein the third thickness is thinner than a first thickness of the first partial region along the second direction.
12. The device according to claim 1 , wherein a position of the third surface in the second direction is between a position of the first surface in the second direction and a position of the second surface in the second direction.
13. The device according to claim 1 , wherein the first electrode overlaps at least a portion of the third layer in the first direction.
14. The device according to claim 1 , wherein the second electrode overlaps at least a portion of the third layer in the first direction.
15. The device according to claim 1 , wherein the third partial region is between, in the first direction, two portions included in the first layer.