Electro-optical device with III-V gain materials and integrated heat sink
An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.
1. An electro-optical device, comprising:
a first wafer component, comprising a silicon on insulator wafer having a substrate and a cladding layer on top of the silicon substrate, the cladding layer comprising a cavity formed therein, the cavity filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer, the cavity in the cladding layer extending to the silicon substrate, so as for the thermal spreader to be in contact with the silicon substrate; and
a second wafer component, comprising a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation,
wherein
the second wafer component is bonded to the first wafer component, such that an underside surface of said stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader; and
the thermal spreader having a refractive index that is lower than each of: the refractive index of the silicon substrate; and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation, and the cladding layer comprises:
a first oxide layer, corresponding to a buried oxide of the silicon on insulator wafer; and
a second oxide layer on top of the first oxide layer, and wherein
said cavity extends through the second oxide layer and at least partly through the first oxide layer.
2. The electro-optical device according to 1, wherein
the stack of III-V semiconductor gain materials is structured to face with and at least partially overlap the thermal spreader.
3. The electro-optical device according to claim 1 , wherein
the thermal spreader has a thermal conductivity that is at least ten times larger than that of the cladding layer.
4. The electro-optical device according to claim 1 , wherein
the electro-optical device comprises a set of two or more cavities formed in the cladding layer, including said cavity, the cavities of the set filled with respective, electrically insulating, thermal spreaders, including said thermal spreader, each of the thermal spreaders having a thermal conductivity larger than that of the cladding layer, wherein said stack of III-V semiconductor gain materials is arranged so as to be in thermal communication with the thermal spreaders.
5. The electro-optical device according to claim 4 , wherein
said thermal spreaders include two spreaders separated by a residual portion of the cladding layer, said residual portion being arranged opposite the stack of III-V semiconductor gain materials, and
the electro-optical device further comprises a silicon component embedded in the residual portion of the cladding layer, said component structured from an initial top silicon layer of the silicon on insulator wafer.
6. The electro-optical device according to claim 5 , wherein
said silicon component is a silicon waveguide, arranged opposite the stack of III-V semiconductor gain materials.
7. The electro-optical device according to claim 1 , wherein
the thermal spreader is a CMOS-compatible material.
8. The electro-optical device according to claim 7 , wherein
the electro-optical device is a CMOS-fabricated device and the stack of III-V semiconductor gain materials is embedded in the back end of the line of the electro-optical device.
9. The electro-optical device according to claim 1 , wherein
the electro-optical device comprises an edge-emitting laser device, the latter including said stack of III-V semiconductor gain materials.
10. The electro-optical device according to claim 9 , wherein
the laser device is embedded in the second wafer component so as to allow a common back end of the line with other electronic components integrated within in the second wafer component.
11. The electro-optical device according to claim 9 , wherein
the laser device is an edge-emitting, lateral current injection laser device.
12. The electro-optical device according to claim 9 , wherein
the laser device is an edge-emitting, vertical current injection laser device.
13. The electro-optical device according to claim 1 , wherein
the thermal spreader has a refractive index that is less than 2.5 for a wavelength larger than 200 nm.
14. The electro-optical device according to claim 1 , wherein
the thermal spreader comprises one or more of the following materials:
diamond;
boron nitride; and
aluminum nitride.
15. The electro-optical device according to claim 14 , wherein
the thermal spreader comprises aluminum nitride.
16. The electro-optical device according to claim 1 , wherein
said stack of III-V semiconductor gain materials comprises one of: In 1-x-y Al x Ga y As, with 0≤x≤1 and 0≤y≤1−x; InGaAsP; and InGaAsN.
17. A silicon photonics chip, comprising an electro-optical device integrated therein, wherein the electro-optical device, comprises:
a first wafer component, comprising a silicon on insulator wafer having a substrate and a cladding layer on top of the silicon substrate, the cladding layer comprising a cavity formed therein, the cavity filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer, the cavity in the cladding layer extending to the silicon substrate, so as for the thermal spreader to be in contact with the silicon substrate; and
a second wafer component, comprising a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation,
wherein
the second wafer component is bonded to the first wafer component, such that an underside surface of said stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader; and
the thermal spreader has a refractive index that is lower than each of:
the refractive index of the silicon substrate; and
an average refractive index of the stack of III-V semiconductor gain materials for said given radiation, and the cladding layer comprises:
a first oxide layer, corresponding to a buried oxide of the silicon on insulator wafer; and
a second oxide layer on top of the first oxide layer, and wherein
said cavity extends through the second oxide layer and at least partly through the first oxide layer.