Semiconductor laser oscillator
A semiconductor laser oscillator includes laser diode modules. A temperature sensor directly or indirectly detects a temperature of at least one of the laser diode modules. A collimating lens collimates respective lasers emitted from the laser diode modules. A grating performs spectrum beam coupling for the lasers emitted from the collimating lens. An incident angle varying mechanism changes incident angles of the respective lasers, at which the lasers emitted from the collimating lens are incident onto the grating in response to the temperature detected by the temperature sensor.
1. A semiconductor laser oscillator comprising:
a plurality of laser diode modules;
a temperature sensor configured to directly or indirectly detect a temperature of at least one laser diode module among the plurality laser diode modules;
a collimating lens configured to collimate respective laser beams emitted from the laser diode modules;
a grating configured to perform spectrum beam coupling for the laser beams emitted from the collimating lens; and
an incident angle varying mechanism configured to change incident angles of the respective laser beams incident on the grating, in response to the temperature detected by the temperature sensor;
wherein the incident angle varying mechanism comprises:
a driver configured to move the collimating lens and the grating in a common direction and in a direction perpendicular to an optical axis of the collimating lens; and
a movement controller configured to control movement of the collimating lens and the grating in response to the temperature detected by the temperature sensor.
2. A semiconductor laser oscillator comprising:
a plurality of laser diode modules;
a temperature sensor configured to directly or indirectly detect a temperature of at least one laser diode module among the plurality laser diode modules;
a collimating lens configured to collimate respective laser beams emitted from the laser diode modules;
a grating configured to perform spectrum beam coupling for the laser beams emitted from the collimating lens; and
an incident angle varying mechanism configured to change incident angles of the respective laser beams incident on the grating, in response to the temperature detected by the temperature sensor;
wherein the incident angle varying mechanism comprises:
a first driver configured to rotate the grating in a direction of changing incident angles of the laser beams;
a total reflection mirror onto which the laser beams emitted from the grating is incident;
a second driver configured to move the total reflection mirror in a direction parallel to an optical axis of the laser beams emitted from the total reflection mirror, so that a deviation of an optical axis of the laser emitted from the grating is corrected, the deviation being caused by an action that the first driver rotates the grating; and
a rotation/movement controller configured to control the rotation of the grating by the first driver and the movement of the total reflection mirror by the second driver in response to the temperature detected by the temperature sensor.
3. A semiconductor laser oscillator comprising:
a plurality of laser diode modules;
a temperature sensor configured to directly or indirectly detect a temperature of at least one laser diode module among the plurality laser diode modules;
a collimating lens configured to collimate respective laser beams emitted from the laser diode modules;
a grating configured to perform spectrum beam coupling for the laser beams emitted from the collimating lens; and
an incident angle varying mechanism configured to change incident angles of the respective laser beams incident on the grating, in response to the temperature detected by the temperature sensor;
wherein the incident angle varying mechanism comprises:
a synthetic quartz substrate disposed in front of the collimating lens;
a driver configured to rotate the synthetic quartz substrate to change incident angles of the laser beams incident onto the grating; and
a rotation controller configured to control rotation of the synthetic quartz substrate by the driver in response to the temperature detected by the temperature sensor, in such a way that a surface of the synthetic quartz substrate is less than 90 degrees with respect to an optical axis of the laser beams incident on the synthetic quartz substrate, when the temperature of the laser diode module is lower than a predetermined temperature, and that the surface of the synthetic quartz substrate is 90 degrees with respect to the optical axis of the laser beams incident on the synthetic quarts substrate, when the temperature of the laser diode module is equal to or higher than the predetermined temperature.
4. The semiconductor laser oscillator according to claim 1 , wherein the movement controller controls the driver to place the collimating lens and the grating alternately at two positions in response to the temperature detected by the temperature sensor.
5. The semiconductor laser oscillator according to claim 1 , wherein the movement controller controls the driver to place the collimating lens and the grating continuously from a first position to a second position in response to the temperature detected by the temperature sensor.
6. The semiconductor laser oscillator according to claim 1 , wherein the movement controller controls the driver to place the collimating lens and the grating discretely between two positions in response to the temperature detected by the temperature sensor.
7. The semiconductor laser oscillator according to claim 2 , wherein the rotation/movement controller controls the first driver to rotate the grating alternately at two angles in response to the temperature detected by the temperature sensor and controls the second driver to place the total reflection mirror alternately at two positions in response to the temperature detected by the temperature sensor.
8. The semiconductor laser oscillator according to claim 2 , wherein the rotation/movement controller controls the first driver to rotate the grating continuously from a first angle to a second angle in response to the temperature detected by the temperature sensor, and controls the second driver to place the total reflection mirror continuously from a first position to a second position in response to the temperature detected by the temperature sensor.
9. The semiconductor laser oscillator according to claim 3 , wherein the rotation controller controls the driver to rotate the synthetic quartz substrate alternately at two angles in response to the temperature detected by the temperature sensor.
10. The semiconductor laser oscillator according to claim 3 , wherein the rotation controller controls the driver to rotate the synthetic quartz substrate continuously from a first angle to a second angle in response to the temperature detected by the temperature sensor.