Semiconductor device
A semiconductor device includes an internal operation control circuit suitable for generating a set period signal which is enabled for a set period, in response to a write command and an internal operation control signal, and generating a column select signal, an output control signal and an input control signal in response to the set period signal; and an internal operation circuit suitable for performing an internal operation of converting parity data generated from input data and storing the converted parity data in a memory cell array, in response to the column select signal, the output control signal and the input control signal.
1. A semiconductor device comprising:
an internal operation control circuit suitable for generating a set period signal which is enabled for a set period, in response to a write command and an internal operation control signal, and generating a column select signal, an output control signal and an input control signal in response to the set period signal; and
an internal operation circuit suitable for performing an internal operation of converting parity data generated from input data and storing the converted parity data in a memory cell array, in response to the column select signal, the output control signal and the input control signal,
wherein the internal operation circuit comprises a pre-parity generation circuit suitable for replacing at least one bit to be masked among bits included in the input data according to masking information, with a bit corresponding to internal data, and generating the pre-parity data from the input data in which the bit is replaced.
2. The semiconductor device according to claim 1 , wherein the set period includes a first internal period and a second internal period.
3. The semiconductor device according to claim 1 , wherein the output control signal is enabled in the first internal period, and the input control signal is enabled in the second internal period.
4. The semiconductor device according to claim 1 , wherein the internal operation control circuit comprises:
a set period signal generation circuit suitable for generating the set period signal which is enabled for the set period, in synchronization with a time at which the write command and the internal operation control signal are enabled.
5. The semiconductor device according to claim 1 , wherein the internal operation control circuit comprises:
a column select signal generation circuit suitable for generating the column select signal which is enabled for the set period, in response to the set period signal.
6. The semiconductor device according to claim 1 , wherein the internal operation control circuit comprises:
a data input/output control circuit suitable for generating the output control signal which is enabled in the first internal period included in the set period and generating the input control signal which is enabled in the second internal period included in the set period, in response to the set period signal.
7. The semiconductor device according to claim 6 , wherein the data input/output control circuit comprises:
an internal period signal generation circuit suitable for generating an internal period signal which is enabled in the first internal period and the second internal period, in response to the set period signal; and
an input/output control signal generation circuit suitable for generating the output control signal and the input control signal in response to the internal period signal.
8. The semiconductor device according to claim 1 , wherein the internal operation circuit comprises:
a sense amplifier circuit suitable for sensing and amplifying data and parity data outputted from the memory cell array and generating the internal data and internal parity data in response to the output control signal;
a parity conversion circuit suitable for generating the converted parity data from the masking information, the input data, the internal data and the internal parity data; and
a write driver suitable for storing the converted parity data in the memory cell array in response to the input control signal.
9. The semiconductor device according to claim 1 , wherein the internal operation circuit comprises:
a parity conversion circuit suitable for generating the converted parity data by converting the pre-parity data which is generated from the input data if an error is included in a bit to be masked among bits included in the internal data generated from the memory cell array in response to the output control signal.
10. The semiconductor device according to claim 1 , wherein the parity conversion circuit generates a syndrome signal from the internal data and the internal parity data, and generates a control signal according to the syndrome signal and the masking information.
11. The semiconductor device according to claim 10 , wherein the control signal is enabled if a position of a bit having an error among bits included in the internal data corresponds to a position of a bit to be masked.
12. The semiconductor device according to claim 10 , wherein the parity conversion circuit comprises:
a converted parity output circuit suitable for generating the converted parity data from the pre-parity data and the syndrome signal in response to the control signal.
13. The semiconductor device according to claim 12 , wherein the converted parity output circuit generates the converted parity data by performing an exclusive OR function on the syndrome signal and the pre-parity data if the control signal is enabled.
14. A semiconductor device comprising:
an internal operation control circuit suitable for generating a set period signal which is enabled in a first internal period and a second internal period, in response to a write command and an internal operation control signal, generating an output control signal and an input control signal in response to the set period signal, and generating a column select signal in response to the output control signal and the input control signal; and
an internal operation circuit suitable for performing an internal operation of converting parity data generated from input data and storing the converted parity data in a memory cell array, in response to the column select signal, the output control signal and the input control signal, wherein the internal operation control circuit comprises an internal period signal generation circuit suitable for generating an internal period signal which is enabled in the first internal period and the second internal period, in response to the set period signal, and an input/output control signal generation circuit suitable for generating the output control signal and the input control signal in response to the internal period signal.
15. The semiconductor device according to claim 14 , wherein the output control signal is enabled in the first internal period, and the input control signal is enabled in the second internal period.
16. The semiconductor device according to claim 14 , wherein the internal operation control circuit generates the set period signal which is enabled in the first internal period and the second internal period set in synchronization with a time at which the write command and the internal operation control signal are enabled.
17. The semiconductor device according to claim 14 , wherein the internal operation control circuit generates the output control signal by buffering the set period signal in the first internal period, and generates the input control signal by buffering the set period signal in the second internal period.
18. The semiconductor device according to claim 14 , wherein the column select signal is enabled in synchronization with the output control signal, and is disabled in synchronization with the input control signal.
19. The semiconductor device according to claim 14 , wherein the internal operation circuit comprises:
a parity conversion circuit suitable for generating the converted parity data by converting pre-parity data which is generated from the input data if an error is included in a bit to be masked among bits included in internal data generated from the memory cell array in response to the output control signal.