Semiconductor device and method for manufacturing same
According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided above the foundation layer, a columnar portion, a hole, and a sealing film. The stacked body includes a plurality of conductive layers stacked with an air gap interposed. The columnar portion includes a semiconductor body. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and contacts the foundation layer. The hole extends in the stacking direction through the stacked body and forms a cavity communicating with the air gap. The sealing film plugs an upper end of the hole forming the cavity.
1. A semiconductor device, comprising:
a foundation layer;
a stacked body provided above the foundation layer, the stacked body including a plurality of conductive layers stacked with an air gap interposed;
a columnar portion including a semiconductor body, the semiconductor body extending in a stacking direction of the stacked body through the stacked body and contacting the foundation layer;
a hole extending in the stacking direction through the stacked body and forming a cavity communicating with the air gap;
a sealing film plugging an upper end of the hole forming the cavity; and
a first separation portion extending in a first direction and dividing the stacked body into a plurality of blocks in a second direction, the first direction crossing the stacking direction, the second direction crossing the first direction.
2. The device according to claim 1 , wherein a plurality of the holes is arranged in a first direction crossing the stacking direction.
3. The device according to claim 1 , wherein a plurality of the holes is arranged in the first direction between the first separation portion and the columnar portion.
4. The device according to claim 1 , further comprising a second separation portion extending in the first direction and dividing the conductive layer of at least an uppermost layer into a plurality of blocks in the second direction.
5. The device according to claim 4 , wherein a plurality of the holes is arranged in the first direction in a region overlapping the second separation portion.
6. The device according to claim 5 , wherein the second separation portion is a cavity communicating with the holes.
7. The device according to claim 1 , wherein a plurality of the columnar portions and a plurality of the holes are arranged periodically at a substantially uniform pitch.
8. The device according to claim 1 , wherein a region between the plurality of conductive layers adjacent to each other in the stacking direction includes
a region where an insulating layer is provided, and
a region where the air gap spreads at a periphery of the hole.
9. The device according to claim 1 , wherein a diameter of the hole is smaller than a diameter of the columnar portion.
10. The device according to claim 1 , wherein
the foundation layer includes a semiconductor region, and
the semiconductor body contacts the semiconductor region.
11. The device according to claim 10 , wherein a side surface of the semiconductor body contacts the semiconductor region.
12. A semiconductor device, comprising:
a foundation layer;
a stacked body provided above the foundation layer, the stacked body including a plurality of conductive layers stacked with an air gap interposed;
a columnar portion including a semiconductor body, the semiconductor body extending in a stacking direction of the stacked body through the stacked body and contacting the foundation layer;
a hole extending in the stacking direction through the stacked body and forming a cavity communicating with the air gap; and
a sealing film plugging an upper end of the hole forming the cavity, wherein
the stacked body includes an insulating layer provided between the foundation layer and the conductive layer of a lowermost layer, and
the foundation layer includes a protrusion piercing the insulating layer and being provided under the hole.
13. The device according to claim 12 , further comprising a first separation portion extending in a first direction and dividing the stacked body into a plurality of blocks in a second direction, the first direction crossing the stacking direction, the second direction crossing the first direction.
14. The device according to claim 13 , wherein a plurality of the holes is arranged in the first direction between the first separation portion and the columnar portion.
15. The device according to claim 13 , further comprising a second separation portion extending in the first direction and dividing the conductive layer of at least an uppermost layer into a plurality of blocks in the second direction.
16. The device according to claim 15 , wherein a plurality of the holes is arranged in the first direction in a region overlapping the second separation portion.
17. The device according to claim 16 , wherein the second separation portion is a cavity communicating with the holes.
18. The device according to claim 12 , wherein a plurality of the holes is arranged in a first direction crossing the stacking direction.
19. The device according to claim 12 , wherein a plurality of the columnar portions and a plurality of the holes are arranged periodically at a substantially uniform pitch.
20. The device according to claim 12 , wherein a region between the plurality of conductive layers adjacent to each other in the stacking direction includes
a region where an insulating layer is provided, and
a region where the air gap spreads at a periphery of the hole.
21. The device according to claim 12 , wherein a diameter of the hole is smaller than a diameter of the columnar portion.