Light emitting device
Disclosed in an embodiment is a light emitting device comprising: a first semiconductor layer; an active layer disposed on the first semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers; and a second semiconductor layer disposed on the active layer. The active layer comprises at least one first well layer which emits light of a first wavelength range and at least one second well layer which emits light of a second wavelength range, wherein the light of the first wavelength range has a first peak in the 450 nm to 499 nm wavelength region, and the light of the second wavelength range has a second peak in the 500 nm to 550 nm wavelength region.
1. A light emitting device comprising:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer and including a plurality of well layers and a plurality of barrier layers; and
a second semiconductor layer disposed on the active layer,
wherein the plurality of well layers of the active layer includes one or more first well layers configured to emit a first light in a first wavelength range and one or more second well layers configured to emit a second light in a second wavelength range,
wherein the first light in the first wavelength range has a first peak in a wavelength region of 470 nm to 490 nm, and the second light in the second wavelength range has a second peak in a wavelength region of 510 nm to 530 nm,
wherein an intensity of the first peak is in a range of 30% to 80% with respect to an intensity of the second peak, and
wherein a half width of the first peak is narrower than a half width of the second peak.
2. The light emitting device of claim 1 , wherein the first well layer is disposed adjacent to the second semiconductor layer on the basis of a half point in a thickness direction of the active layer.
3. The light emitting device of claim 1 , wherein an energy band gap of the one or more first well layers is greater than that of the one or more second well layers.
4. The light emitting device of claim 1 , wherein an indium content of the one or more first well layers is less than that of the one or more second well layers.
5. The light emitting device of claim 4 , wherein a difference in indium content between the one or more first well layers and the one or more second well layers is 10% or more.
6. The light emitting device of claim 1 , wherein a thickness of the one or more first well layers is less than that of the one or more second well layers.
7. The light emitting device of claim 1 , wherein a difference in thickness between the one or more first well layers and the one or more second well layers is 10% or more.
8. The light emitting device of claim 1 , wherein an interval between the first peak and the second peak is in a range of 30 nm to 50 nm.
9. The light emitting device of claim 8 , wherein:
a thickness of the one or more first well layers is in a range of 70% to 80% with respect to a thickness of the one or more second well layers of 100%; and
an indium content of the one or more first well layers is in a range of 80% to 90% with respect to an indium content of the one or more second well layers of 100%.
10. The light emitting device of claim 8 , wherein a thickness of the one or more first well layers is in a range of 2.2 nm to 2.4 nm, and an indium content thereof is in a range of 22% to 24%.
11. The light emitting device of claim 1 , wherein:
the one or more second well layers includes a plurality of second well layers, each of which is identical to each other, are disposed; and
wherein the plurality of second well layers have different energy band gaps.
12. The light emitting device of claim 1 , wherein the half width of the first peak is in a range of 20 nm to 27 nm and the half width of the of the second peak is in a range of 25 nm to 35 nm.
13. The light emitting device of claim 4 , wherein a thickness of the one or more first well layers is less than that of the one or more second well layers.
14. A light emitting device package comprising:
a light emitting device; and
a wavelength conversion layer configured to convert a wavelength of a portion of light emitted from the light emitting device,
wherein the light emitting device includes:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer and including a plurality of well layers and a plurality of barrier layers; and
a second semiconductor layer disposed on the active layer,
wherein the plurality of well layers of the active layer includes one or more first well layers configured to emit a first light in a first wavelength range and one or more second well layers configured to emit a second light in a second wavelength range,
wherein the first light in the first wavelength range has a first peak in a wavelength region of 470 nm to 490 nm, and the second light in the second wavelength range has a second peak in a wavelength region of 510 nm to 530 nm,
wherein an intensity of the first peak is in a range of 30% to 80% with respect to an intensity of the second peak, and
wherein a half width of the first peak is narrower than a half width of the of the second peak.
15. The light emitting device of claim 14 , wherein light, in which the first light in the first wavelength range and the second light in the second wavelength range, which are emitted from the light emitting device, and the light having the wavelength converted by the wavelength conversion layer are mixed, is white light.
16. The light emitting device of claim 14 , wherein an interval between the first peak and the second peak is in a range of 30 nm to 50 nm.
17. A lighting device comprising the light emitting device package according to claim 14 .
18. The light emitting device of claim 14 , wherein the wavelength conversion layer comprises a phosphor comprising K 2 SiF 6 :Mn 4+ .