Terahertz quantum cascade laser device
A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
1. A terahertz quantum cascade laser device, comprising:
a substrate;
a semiconductor stacked body including an active layer and a first clad layer, the active layer being provided on the substrate and being configured to emit infrared laser light by an intersubband optical transition, the first clad layer being provided on the active layer, a ridge waveguide being provided in the semiconductor stacked body, a first distributed feedback region and a second distributed feedback region being provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide;
a first electrode provided at the upper surface of the first clad layer;
a first Peltier device configured to control a peak temperature of the first distributed feedback region; and
a second Peltier device configured to control a peak temperature of the second distributed feedback region,
a size of the first electrode at the first distributed feedback region being smaller than a size of the first electrode at the second distributed feedback region.
2. The device according to claim 1 , wherein
first infrared laser light generated in the first distributed feedback region and second infrared laser light generated in the second distributed feedback region are emitted from one end surface of the ridge waveguide, and
terahertz laser light is emitted from an end surface of the substrate tilted with respect to the one end surface of the ridge waveguide, the terahertz laser light being a difference frequency wave of the first infrared laser light and the second infrared laser light.
3. The device according to claim 2 , wherein
the first infrared laser light and the second infrared laser light are emitted in the perpendicular direction of the one end surface of the ridge waveguide, and
the terahertz laser light is emitted parallel to the perpendicular direction of the one end surface of the ridge waveguide.
4. The device according to claim 3 , wherein a pitch of a diffraction grating of the first distributed feedback region is not more than a pitch of a diffraction grating of the second distributed feedback region.
5. The device according to claim 3 , wherein the first electrode includes a first region provided at an upper surface of the first distributed feedback region, and a second region provided at an upper surface of the second distributed feedback region and separated from the first region.
6. The device according to claim 5 , wherein a pitch of a diffraction grating of the first distributed feedback region is not less than a pitch of a diffraction grating of the second distributed feedback region.
7. The device according to claim 2 , wherein a pitch of a diffraction grating of the first distributed feedback region is not more than a pitch of a diffraction grating of the second distributed feedback region.
8. The device according to claim 2 , wherein the first electrode includes a first region provided at an upper surface of the first distributed feedback region, and a second region provided at an upper surface of the second distributed feedback region and separated from the first region.
9. The device according to claim 8 , wherein a pitch of a diffraction grating of the first distributed feedback region is not less than a pitch of a diffraction grating of the second distributed feedback region.
10. The device according to claim 1 , wherein a pitch of a diffraction grating of the first distributed feedback region is not more than a pitch of a diffraction grating of the second distributed feedback region.
11. The device according to claim 1 , wherein the first electrode includes a first region provided at an upper surface of the first distributed feedback region, and a second region provided at an upper surface of the second distributed feedback region and separated from the first region.
12. The device according to claim 11 , wherein a pitch of a diffraction grating of the first distributed feedback region is not less than a pitch of a diffraction grating of the second distributed feedback region.
13. The device according to claim 1 , wherein a width of the first distributed feedback region and a width of the second distributed feedback region are the same.
14. The device according to claim 1 , wherein the active layer includes a quantum well layer made of GaInAs and AlInAs.