Apparatus and methods for integrating magnetoresistive devices
The present disclosure is drawn to, among other things, a method of fabricating an integrated circuit device having a magnetoresistive device. In some aspects, the method includes forming the magnetoresistive device on a first contact of a substrate, wherein the magnetoresistive device includes a fixed magnetic region and a free magnetic region separated by an intermediate region; depositing a first dielectric material over the magnetoresistive device; depositing a second dielectric material over the first dielectric material; polishing a surface of the second dielectric material; forming a first cavity through the polished surface of the second dielectric material to expose a surface of the magnetoresistive device; and depositing an electrically conductive material in the first cavity to form a via.
1. A method of fabricating an integrated circuit device having a magnetoresistive device, comprising:
forming the magnetoresistive device on a first contact of a substrate, wherein the magnetoresistive device includes a fixed magnetic region and a free magnetic region separated by an intermediate region;
depositing a first dielectric material over the magnetoresistive device, wherein the first dielectric material is a low-k or an ultra low-k dielectric material;
depositing a second dielectric material over the first dielectric material, wherein the second dielectric material is a conventional dielectric material;
polishing a surface of the second dielectric material;
forming a first cavity through the polished surface of the second dielectric material to expose a surface of the magnetoresistive device; and
depositing an electrically conductive material in the first cavity to form a via.
2. The method of claim 1 , wherein a dielectric constant of the second dielectric material is higher than a dielectric constant of the first dielectric material.
3. The method of claim 1 , wherein the polishing is halted before the first dielectric material is exposed.
4. The method of claim 1 , wherein the polishing is halted when the first dielectric material is exposed.
5. The method of claim 1 , further comprising:
polishing a portion of the first dielectric material above the magnetoresistive device after polishing the surface of the second dielectric material.
6. The method of claim 1 , further comprising:
depositing a third dielectric material after forming the via;
polishing a surface of the third dielectric material;
forming a second cavity through the polished surface of the third dielectric material to expose a surface of the via; and
depositing a second electrically conductive material in the second cavity.
7. The method of claim 6 , wherein a dielectric constant of the third dielectric material is lower than the dielectric constant of the second dielectric material.
8. The method of claim 6 , wherein the third dielectric material is a low-k or an ultra low-k dielectric material.
9. The method of claim 6 , wherein a dielectric constant of the second dielectric material is higher than a dielectric constant of each of the first dielectric material and the third dielectric material.
10. A method of fabricating an integrated circuit device having a magnetoresistive device, comprising:
forming a magnetoresistive device, wherein the magnetoresistive device includes a plurality of magnetic regions separated by an intermediate region;
depositing a first dielectric material over the magnetoresistive device, wherein the first dielectric material is a low-k or an ultra low-k dielectric material;
polishing a surface of the first dielectric material;
depositing a second dielectric material over the polished surface of the first dielectric material, wherein the second dielectric material is a conventional dielectric material;
forming a first cavity through a surface of the second dielectric material; and
depositing an electrically conductive material in the first cavity.
11. The method of claim 10 , wherein a dielectric constant of the second dielectric material is higher than a dielectric constant of the first dielectric material.
12. The method of claim 10 , wherein the polishing is halted before the magnetoresistive device is exposed.
13. The method of claim 10 , wherein forming the first cavity comprises etching through the second dielectric material and the first dielectric material by adjusting etchant chemistry.
14. The method of claim 10 , further comprising:
depositing a third dielectric material after forming the via;
polishing a surface of the third dielectric material;
forming a second cavity through the polished surface of the third dielectric material to expose a surface of the via; and
depositing an electrically conductive material in the second cavity.
15. The method of claim 14 , wherein a dielectric constant of the third dielectric material is lower than the dielectric constant of the second dielectric material.
16. The method of claim 14 , wherein the third dielectric material is a low-k or an ultra low-k dielectric material.
17. The method of claim 14 , wherein the second dielectric material is a conventional dielectric material.
18. The method of claim 14 , wherein a dielectric constant of the second dielectric material is higher than a dielectric constant of each of the first dielectric material and the third dielectric material.