Treatment method of emitting layer raw material in OLED and application
View Patent ↗Provided is a treatment method of an emitting layer raw material in an OLED, comprising steps of: (1) providing the emitting layer raw material, and the emitting layer raw material comprising a host and a dopant, and in a vacuum glove box with protective gas, adding the host, the dopant and anhydrous ethanol into a polytetrafluoroethylene lining to be mixed uniformly, and putting the lining in a high pressure autoclave to be treated at a temperature of 40 to 60 celsius degrees for 18 to 36 hours to obtain a treatment liquid; (2) centrifuging the treatment liquid to collect a precipitate, and drying the collected precipitate to obtain the emitting layer raw material after treatment. The resulting treated emitting layer raw material achieves sufficient mixing and dispersion of the host and the dopant, and does not affect the subsequent use of vacuum evaporation method to form an emitting layer.
1. A treatment method of an emitting layer raw material in an OLED, comprising steps of:
(1) providing the emitting layer raw material, and the emitting layer raw material comprising a host and a dopant, and in a vacuum glove box with protective gas, adding the host, the dopant and anhydrous ethanol into a polytetrafluoroethylene lining to be mixed uniformly to obtain a mixed solution, and putting the lining in a high pressure autoclave to be treated at a temperature of 40 to 60 celsius degree for 18 to 36 hours to obtain a treatment liquid;
(2) centrifuging the treatment liquid to collect a precipitate, and drying the collected precipitate to obtain the emitting layer raw material after treatment.
2. The treatment method according to claim 1 , wherein a temperature of the treatment is 40 to 55 celsius degrees.
3. The treatment method according to claim 1 , wherein a time of the treatment is 20 to 30 hours.
4. The treatment method according to claim 1 , wherein a filling degree of the anhydrous ethanol in the polytetrafluoroethylene lining is 70 to 80 degrees.
5. The treatment method according to claim 1 , wherein a concentration of the host in the mixed solution is 0.2 to 0.6 mol/L.
6. The treatment method according to claim 1 , wherein a mass of the dopant does not exceed 3% of a mass of the host.
7. The treatment method according to claim 1 , wherein the vacuum glove box with protective gas is a glove box is evacuated, and then the protective gas is passed.
8. The treatment method according to claim 1 , wherein the protective gas comprises one or more of nitrogen and argon.
9. The treatment method according to claim 1 , wherein a speed of centrifuging is 8,000 to 10,000 r/min; and a time of centrifuging is 5-20 mins.
10. The treatment method according to claim 1 , wherein a triplet energy gap of the host is larger than a triplet energy gap of the dopant.
11. A manufacturing method of an organic electroluminescent element, comprising steps of:
(1) providing the emitting layer raw material, and the emitting layer raw material comprising a host and a dopant, and in a vacuum glove box with protective gas, adding the host, the dopant and anhydrous ethanol into a polytetrafluoroethylene lining to be mixed uniformly to obtain a mixed solution, and putting the lining in a high pressure autoclave to be treated at a temperature of 40 to 60 celsius degree for 18 to 36 hours to obtain a treatment liquid;
(2) centrifuging the treatment liquid to collect a precipitate, and drying the collected precipitate to obtain the emitting layer raw material after treatment;
(3) providing an anode conductive substrate, and manufacturing a hole injection layer, a hole transporting layer on a conductive anode layer of the anode conductive substrate in order;
on the hole transporting layer, implementing vacuum evaporation with the foregoing emitting layer raw material after treatment to obtain an emitting layer;
manufacturing an electron transporting layer, an electron injection layer and a cathode on the emitting layer in order to obtain the organic electroluminescent element.
12. The manufacturing method according to claim 11 , wherein a temperature of the treatment is 40 to 55 celsius degrees.
13. The manufacturing method according to claim 11 , wherein a time of the treatment is 20 to 30 hours.
14. The manufacturing method according to claim 11 , wherein a concentration of the host in the mixed solution is 0.2 to 0.6 mol/L.
15. The manufacturing method according to claim 11 , wherein a mass of the dopant does not exceed 3% of a mass of the host.
16. The manufacturing method according to claim 11 , wherein a material of the conductive anode layer is selected from one or more of conductive metal oxide, conductive metal, and alloy.