Semiconductor device including integrated fan out antenna and method of forming the same
A semiconductor device includes an active device. The semiconductor device further includes a plurality of antenna grounds electrically connected to the active device. The semiconductor device further includes a plurality of patch antennas, wherein each patch antenna of the plurality of patch antennas is over a corresponding antenna ground of the plurality of antenna grounds. The semiconductor device further includes a plurality of reflectors, wherein each antenna ground of the plurality of antenna ground is between a corresponding patch antenna of the plurality of patch antennas and a corresponding reflector of the plurality of reflectors. An area of each antenna ground of the plurality of antenna grounds is greater than an area of each reflector of the plurality of reflectors.
1. A semiconductor device comprising:
an active device;
a plurality of antenna grounds electrically connected to the active device;
a plurality of patch antennas, wherein each patch antenna of the plurality of patch antennas is over a corresponding antenna ground of the plurality of antenna grounds;
a plurality of reflectors, wherein each antenna ground of the plurality of antenna ground is between a corresponding patch antenna of the plurality of patch antennas and a corresponding reflector of the plurality of reflectors, and an area of each antenna ground of the plurality of antenna grounds is greater than an area of each reflector of the plurality of reflectors; and
a molding compound, wherein each of the plurality of antenna grounds is on a first side of the molding compound, each of the plurality of patch antennas is on a second side of the molding compound, and the first side is opposite to the second side.
2. The semiconductor device of claim 1 , wherein an area of each patch antenna of the plurality of patch antennas is less than an area of each reflector of the plurality of reflectors.
3. The semiconductor device of claim 1 , wherein a width of each antenna ground of the plurality of antenna grounds is at least twice a width of each patch antenna of the plurality of patch antennas.
4. The semiconductor device of claim 1 , wherein a diameter of each antenna ground of the plurality of antenna grounds ranges from about 2000 micrometers (μm) to about 3500 μm.
5. The semiconductor device of claim 1 , wherein the molding compound surrounds the active device.
6. The semiconductor device of claim 1 , wherein a dimension of each patch antenna of the plurality of patch antennas ranged from about 1/10λ to about ½λ, where λ is a wavelength of an output signal of the semiconductor device.
7. The semiconductor device of claim 1 , wherein patch antennas of the plurality of patch antennas are arranged in rectangular array.
8. The semiconductor device of claim 1 , wherein the active device is positioned at a center of the rectangular array.
9. The semiconductor device of claim 1 , wherein the active circuit is configured to generate a signal having a frequency range from about 55 gigahertz (GHz) to about 65 GHz.
10. The semiconductor device of claim 1 , further comprising a plurality of connecting elements electrically connecting each antenna ground of the plurality of antenna grounds to a corresponding reflector of the plurality of reflectors.
11. The semiconductor device of claim 10 , wherein each connecting element of the plurality of connecting elements comprises a solder ball or a copper pillar.
12. A semiconductor device comprising:
an active device; and
a plurality of integrated fan out (InFO) antennas in communication with the active device, wherein each InFO antenna of the plurality of InFO antennas comprises:
an antenna ground;
a patch antenna;
a reflector, wherein the antenna ground is between the reflector and the patch antenna; and
a plurality of connecting elements electrically connecting the antenna ground to the reflector, wherein each connecting element of the plurality of connecting elements extends beyond a border of the patch antenna in a plan view.
13. The semiconductor device of claim 12 , wherein an area of the antenna ground is greater than an area of the reflector.
14. The semiconductor device of claim 12 , further comprising a molding compound surrounding the active device.
15. The semiconductor device of claim 14 , wherein the molding compound is between the patch antenna and the antenna ground.
16. The semiconductor device of claim 12 , wherein a pitch between patch antennas of adjacent InFO antennas of the plurality of InFO antennas is greater than about ¼λ, where λ is a wavelength of an output signal of the semiconductor device.
17. The semiconductor device of claim 12 , wherein a pitch between patch antennas of adjacent InFO antennas of the plurality of InFO antennas ranges from about 1100 micrometers (μm) to about 2200 μm.
18. A method of making a semiconductor device, the method comprising:
electrically connecting an active device to a plurality of redistribution lines (RDLs);
depositing a molding compound over the plurality of RDLs, wherein the molding compound surrounds the active device;
forming a plurality of patch antennas over the molding compound, wherein each patch antenna of the plurality of patch antennas is over a corresponding RDL of the plurality of RDLs, and each RDL of the plurality of RDLs is configured as an antenna ground; and
electrically connecting each RDL of the plurality of RDLs to a corresponding reflector of a plurality of reflectors, wherein an area of each RDL of the plurality of RDLs is greater than an area of the corresponding reflector of the plurality of reflectors.
19. The method of claim 18 , wherein the electrically connecting of each RDL to the corresponding reflector comprises reflowing a connecting element between each RDL and the corresponding reflector.
20. The method of claim 18 , further comprising depositing the plurality of reflectors on a substrate separated from the active device prior to the electrically connecting of each RDL to the corresponding reflector.