Flexible electric device and method of manufacturing the same

1. A flexible electric device comprising:

a first electrode on a flexible member;

a plurality of semiconductor elements on the first electrode;

an insulating layer between adjacent ones of the plurality of semiconductor elements;

at least one filling region between a pair of the semiconductor elements directly adjacent to each other; and

a second electrode on the plurality of semiconductor elements,

wherein the at least one filling region is a defect region formed using a filling material having an insulating property in the defect region and extending from the first electrode to the second electrode to pass through the insulating layer,

wherein the filling material is between the pair of semiconductor elements and spaced apart from the pair of semiconductor elements,

wherein a top surface of the at least one filling region is covered with the second electrode, and

wherein a topmost surface of the filling material is at a level higher than a topmost surface of the plurality of semiconductor elements.

2. The flexible electric device of claim 1 , further comprising:

a buffer layer between the plurality of semiconductor elements and the second electrode,

wherein the second electrode is on a surface of the at least one filling region.

3. The flexible electric device of claim 1 ,

wherein the plurality of semiconductor elements includes a Group III-V semiconductor.

4. The flexible electric device of claim 3 , wherein the Group III-V semiconductor comprises at least one of GaN, InGaN, AlGaN, and AlInGaN.

5. The flexible electric device of claim 1 , wherein the plurality of semiconductor elements comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers.

6. The flexible electric device of claim 5 , further comprising:

a mask layer and a buffer layer between the plurality of semiconductor elements and the second electrode,

wherein the second semiconductor layer is in direct contact with the buffer layer via an opening portion of the mask layer, and the mask layer is between the buffer layer and the second semiconductor layer.

7. The flexible electric device of claim 1 ,

wherein the plurality of semiconductor elements have a core-shell structure.

8. The flexible electric device of claim 1 ,

wherein the at least one filling region is formed of one of an insulating polymer, spin-on-glass (SOG), and photoresist.

9. The flexible electric device of claim 1 , wherein the at least one filling region is between the first and second electrodes.