Method of manufacturing bistable strips having different curvatures
A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.
1. A method, comprising:
manufacturing a first bistable strip having a first curvature, wherein manufacturing the first bistable strip includes forming a first plurality of layers including a first layer of a first material, wherein forming the first layer includes depositing the first layer in a vacuum chamber by plasma spraying using a plasma spray system having a first set of deposition conditions that causes the first curvature; and
manufacturing a second bistable strip having a second curvature different from the first curvature, wherein manufacturing the second bistable strip includes forming a second plurality of layers including a second layer of the first material, wherein forming the second layer includes depositing the second layer in the vacuum chamber by plasma spraying using the plasma spray system having a second set of deposition conditions that causes the second curvature, the second set of deposition conditions being different from the first set of deposition conditions.
2. The method of claim 1 , wherein the first [and second] plurality of layers includes:
a first layer of a second conductive material;
a first layer of a third piezoelectric material; and
a first layer of a fourth conductive material; and
wherein the second plurality of layers includes:
a second layer of the second conductive material;
a second layer of the third piezoelectric material; and
a second layer of the fourth conductive material.
3. The method of claim 2 , wherein the first material and the third piezoelectric material are identical.
4. The method of claim 3 , wherein the first and second layers of the first material each have a thickness in a range from 10 to 500 nm, the first and second layers of the second conductive material each have a thickness in a range from 10 to 500 nm, the first and second layers of the third piezoelectric material each have thicknesses in a range from 1 to 10 μm, and the first and second layers of the fourth conductive material each have thicknesses in a range from 1 to 10 μm.
5. The method of claim 2 , wherein the first material and the third piezoelectric material are aluminum nitride, the second conductive material is platinum, and the fourth conductive material is aluminum.
6. The method of claim 2 , wherein the first and second layers of the second conductive material each have a strain close to zero, the first layers of the third piezoelectric material and the fourth conductive material each have equal and opposite strains; and the second layers of the third piezoelectric material and the fourth conductive material each have equal and opposite strains.
7. The method of claim 1 , wherein forming the first plurality of layers comprises forming the first plurality of layers on a silicon wafer.
8. A method, comprising:
manufacturing a first bistable strip having a first curvature, wherein manufacturing the first bistable strip includes forming a first plurality of layers including a first layer, wherein forming the first layer includes depositing the first layer in a vacuum chamber by plasma spraying using a plasma spray system having a first set of deposition conditions that causes the first curvature; and
manufacturing a second bistable strip having a second curvature different from the first curvature, wherein manufacturing the second bistable strip includes forming a second plurality of layers including a second layer, wherein forming the second layer includes depositing the second layer in the vacuum chamber by plasma spraying using the plasma spray system having a second set of deposition conditions that causes the second curvature, the second set of deposition conditions being different from the first set of deposition conditions.
9. The method of claim 8 , wherein the first and the second sets of conditions include at least one of: applied RF power, power and frequency of a pulsed DC generator, temperature, and biasing of a substrate holder.