Magnetic memory device and techniques for forming
A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.
1. A method, comprising:
providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers;
depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first nitride material;
depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second nitride material; and
depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material, wherein the depositing the interface layer comprises selecting a reaction chemistry that prevents formation of halogen-containing radicals, amino groups or reactive oxygen radicals.
2. The method of claim 1 , the first insulator material comprising silicon nitride or Si—C—N.
3. The method of claim 1 , the second insulator material comprising silicon nitride.
4. The method of claim 1 , the interface layer having a thickness of one to ten nanometers.
5. The method of claim 1 , the depositing the interface layer comprising using a plasma enhanced atomic layer deposition process.
6. The method of claim 1 , the depositing the encapsulation layer comprising growing the encapsulation layer using a plasma enhanced chemical vapor deposition process.
7. The method of claim 1 , wherein the device stack comprises a magnetic tunnel junction device having a plurality of magnetic layers and at least one insulator layer.
8. The method of claim 5 , wherein the depositing the interface layer takes place at a temperature of 150° C. to 250° C.
9. The method of claim 1 , wherein the depositing the interface layer takes place at a temperature of 150° C. to 400° C.
10. The method of claim 1 , wherein the depositing the interface layer comprises providing silyl-terminated molecules or alkylaminosilanes molecules.
11. A method of forming a magnetic device, comprising:
providing a device stack, the device stack extending above a substrate base and comprising sidewall portions, the device stack further including a plurality of magnetic layers;
depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a nitride material having a thickness of one nanometer to three nanometers;
depositing an encapsulation layer on the interface layer, the encapsulation layer comprising silicon nitride; and
depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising an insulating material, wherein the depositing the interface layer comprises selecting a reaction chemistry that prevents formation of halogen-containing radicals, amino groups or reactive oxygen radicals.
12. The method of claim 11 , wherein the insulator material of the interface layer is a S—C—N mixture.
13. The method of claim 11 , wherein the depositing the interface layer comprises depositing the insulator material while not exposing the device stack to a plasma.