Semiconductor devices including protruding insulation portions between active fins
A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.
1. A semiconductor device comprising:
a channel active pattern protruding from a substrate;
a field insulation layer disposed on the substrate;
a source/drain region between the channel active pattern and the field insulation layer;
a first gate disposed on the channel active pattern; and
a second gate disposed on the field insulation layer,
wherein an entire area of a bottom surface of the second gate is disposed below a top surface of the channel active pattern, and wherein a gate insulation layer is disposed between the second gate and a top surface of the field insulation layer.
2. The semiconductor device of claim 1 , wherein the substrate comprises one or more semiconductor materials, or a silicon on insulator substrate.
3. The semiconductor device of claim 1 , wherein the channel active pattern is fin-shaped and includes an epitaxial layer grown from the substrate.
4. The semiconductor device of claim 1 , wherein the field insulation layer comprises an oxide layer, a nitride layer, an oxynitride layer, or a combination thereof.
5. The semiconductor device of claim 1 , wherein the source/drain region comprises an epitaxial layer.
6. The semiconductor device of claim 1 , wherein each of the first gate and the second gate comprises a first metal layer and a second metal layer, the second metal layer filling a space formed by the first metal layer.
7. The semiconductor device of claim 6 , wherein the first metal layer comprises at least one of TiN, TaN, TiC or TaC, and the second metal layer comprises W or Al.
8. The semiconductor device of claim 1 , wherein the gate insulation layer comprises HfO 2 , ZrO 2 , or Ta 2 O 5 .
9. A semiconductor device comprising:
a channel active pattern protruding from a substrate and extending along a first direction;
a field insulation layer disposed on the substrate, wherein the field insulation layer comprises a major surface and a protruding portion extending from the major surface;
a source/drain region between the channel active pattern and the field insulation layer;
a first gate disposed on the channel active pattern and extending along a second direction intersecting the first direction; and
a second gate disposed on the protruding portion of the field insulation layer and extending along the second direction,
wherein a bottom surface of the second gate is disposed below a top surface of the channel active pattern and is disposed above a bottom surface of the source/drain region, and a width of a topmost surface of the protruding portion of the field insulation layer in the first direction is substantially the same as a width of a bottom surface of the second gate in the first direction.
10. The semiconductor device of claim 9 , wherein the substrate comprises one or more semiconductor materials, or a silicon on insulator substrate.
11. The semiconductor device of claim 9 , wherein the channel active pattern is fin-shaped and includes an epitaxial layer grown from the substrate.
12. The semiconductor device of claim 9 , wherein the field insulation layer comprises an oxide layer, a nitride layer, an oxynitride layer, or a combination thereof.
13. The semiconductor device of claim 9 , wherein the source/drain region comprises an epitaxial layer.
14. The semiconductor device of claim 9 , wherein each of the first gate and the second gate comprises a first metal layer and a second metal layer, the second metal layer filling a space formed by the first metal layer.
15. The semiconductor device of claim 14 , wherein the first metal layer comprises at least one of TiN, TaN, TiC or TaC, and the second metal layer comprises W or Al.
16. The semiconductor device of claim 9 , wherein a gate insulation layer is disposed between the second gate and a top surface of the field insulation layer.
17. The semiconductor device of claim 16 , wherein the gate insulation layer comprises HfO2, ZrO2, or Ta2O5.