Cemented tungsten carbide bodies having a cobalt-boron alloy matrix
A cobalt-boron alloy is used as the matrix in a polycrystalline diamond compact. The matrix is hot isostatic pressed with tungsten carbide to form a substrate. The substrate is then high-pressure, high temperature sintered with a diamond powder, preformed and acid-leeched diamond plate, or another ultra-hard material in a press mold to sweep the matrix, thereby creating an ultra-hard polycrystalline compact at a temperature 400° C. lower and with less graphitization than conventional techniques using cobalt binder. The compact is stronger and has a longer useful life than conventional compacts.
1. A method of manufacturing a thermally-stable compact comprising:
providing a cobalt-boron alloy;
providing a first particulate material;
performing a combination operation to combine the particulate material and the alloy to create a solid sol substrate with the alloy as the continuous phase and the first particulate material as the dispersed phase;
providing a plate precursor material selected from the group consisting of: a second hard particulate and a pre-formed ultra-hard skeleton plate;
bringing the plate precursor material into contact with the substrate;
providing enough heat and pressure to melt the continuous phase of the solid sol so that the continuous phase sweeps the plate precursor material, and—the case of a second hard particulate as the plate precursor material—the second hard particulate material undergoes a reaction to form particle-to-particle bonds; and
removing the heat and pressure to solidify a thermally-stable two-layered composite product;
wherein the temperature of the melted continuous phase never reaches the melting temperature of pure cobalt.
2. The method of claim 1 , wherein the first particulate material is tungsten carbide.
3. The method of claim 1 , wherein the first particulate material is present in the solid sol substrate at a loading of 5 to 40 volume percent.
4. The method of claim 1 , wherein the cobalt-boron alloy comprises about 2-25 wt. % boron.
5. The method of claim 4 , wherein the cobalt-boron alloy comprises about 3-7 wt. % boron.
6. The method of claim 5 , wherein the cobalt-boron alloy comprises about 4 wt. % boron.
7. The method of claim 1 , wherein the solid sol substrate is substantially homogenous before being brought into contact with the plate precursor material, and wherein the heat and pressure are maintained long enough and sufficiently high such that the continuous phase of the solid sol can sweep substantially all of the interstitial spaces of the plate precursor material before the heat and the pressure are removed.
8. The method of claim 1 , where in the plate precursor material and the solid sol are brought into contact in a pressure mold.
9. The method of claim 1 , wherein the plate precursor material is diamond powder, and the composite product is a polycrystalline diamond compact.
10. The method of claim 1 , wherein the plate precursor material is either a diamond powder or a preformed, cobalt-free diamond-plate, and the thermally-stable compact is a thermally-stable polycrystalline diamond compact.
11. The method of claim 1 , wherein the second hard particulate is cubic boron nitride powder, and the composite product is a polycrystalline cubic boron nitride compact.
12. A thermally-stable compact manufactured according to claim 1 .
13. The compact of claim 12 , wherein the cobalt-boron alloy comprises about 2-25 wt. % boron, wherein the thermally-stable compact has lower internal stresses than comparable compacts made with a cobalt continuous phase and are not as brittle as thermally-stable compacts with a acid-leached continuous phase.
14. The compact of claim 13 , wherein the cobalt-boron alloy comprises about 3-7 wt. % boron.
15. The compact of claim 12 , wherein the plate precursor material is diamond powder.
16. The compact of claim 12 , wherein the plate precursor material is diamond powder and the thermally stable compact is a thermally-stable polycrystalline diamond compact.
17. The compact of claim 12 , wherein the plate precursor material is cubic boron nitride powder.
18. A method of using the compact of claim 12 , comprising cutting a material, boring a well, or drilling a subterranean feature.
19. The method of claim 1 , wherein the temperature of the melted continuous phase does not exceed 1110° C.