IP Library › Granted Patent US 10,324,645
Granted Patent B2
US 10,324,645 · App. 15/472,270 · Granted Jun 18, 2019

Data storage device and data storage method thereof

Inventors: Tsai-Fa Liu (New Taipei, TW); Hung-Lian Lien (Taipei, TW)
Assignee: SILICON MOTION, INC.
G06F3/0634G06F1/28G06F3/0616G06F3/0617G06F3/0619G06F3/0652G06F3/0656G06F3/0679G06F3/0685G06F12/0238G06F12/0253G06F12/0802G06F3/0653G06F2212/1032G06F2212/60G06F2212/7204
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Quick Facts
Patent No.
US 10,324,645
App. No.
15/472,270
Granted
Jun 18, 2019
Kind
B2
Abstract

A data storage method for a data storage device is provided. The data storage method includes steps of: determining whether a power drop/loss event occurs; when the power drop/loss event is determined to have occurred, recording a voltage level of a charge storage device, wherein the charge storage device provides power to the data storage device during the power drop/loss event; determining whether the charge storage device is operating normally according to the recorded voltage level of the charge storage device; and when the charge storage device is determined to be not operating normally, configuring the data storage device to enter a safe operation mode. A data storage device is also provided.

Claims (10)

1. A data storage method for a data storage device, comprising steps of:

determining whether a power drop/loss event occurs;

when the power drop/loss event is determined to have occurred, recording a voltage level of a charge storage device, wherein the charge storage device provides power to the data storage device during the power drop/loss event;

determining whether the charge storage device is operating normally according to the recorded voltage level of the charge storage device; and

when the charge storage device is determined to be not operating normally, configuring the data storage device to enter a safe operation mode, wherein the safe operation mode comprises a write through mode;

wherein in the write through mode a data from an external device is recorded into both a data buffer area and a volatile memory of the data storage device.

2. The data storage method according to claim 1 , wherein when a time required for the voltage level of the charge storage device to drop from a predetermined voltage level to a voltage threshold is less than a lower error limit, the charge storage device is determined to be not operating normally.

3. The data storage method according to claim 1 , further comprising a step of:

when the charge storage device is determined to be not operating normally, transmitting a spare power damage message to a host via a general purpose input/output (GPIO) pin.

4. The data storage method according to claim 3 , wherein the GPIO pin comprises a function reservation pin of a communication interface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2017
From: LIU, TSAI-FA; LIEN, HUNG-LIAN
To: SILICON MOTION, INC.
Reel/Frame 041772/0325 →
Continuity (2)
Provisional Application 62353570 · Jun 23, 2016
Related Publication 20170371577A1 · Dec 28, 2017