Charged particle beam lithography apparatus and charged particle beam lithography method

1. A charged particle beam lithography apparatus comprising:

an irradiator configured to irradiate a plurality of substrates with charged particle beams, each of the substrates being provided with a predetermined mark;

a detector configured to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal;

an amplifier configured to adjust and amplify the detection signal and output an amplified signal;

a measurement circuitry configured to measure a location of the predetermined mark based on the amplified signal;

a storage configured to store initial gain values of the amplifier for amplifying the detection signal and store initial level values of the amplifier for adjusting the detection signal, the initial gain values and the initial level values corresponding to conditions of the scan; and

an adjuster configured to adjust a gain value and a level value of the amplifier,

wherein

the amplifier amplifies and adjusts the detection signal based on an initial gain value and an initial level value that are selected from the initial gain values and the initial level values according to a condition of the scan, and

the initial gain value and the initial level value are updated as a new initial gain value and a new initial level value in the storage based on a gain value and a level value used by the measurement circuitry to measure the location of the predetermined mark successfully.

2. The apparatus of claim 1 , wherein

the plurality of substrates includes a first substrate and a second substrate; and

the storage includes a first file to store the initial gain value and the initial level value to be used when the first substrate is scanned, and a second file to store the initial gain value and the initial level value to be used when the second substrate is scanned.

3. The charged particle beam lithography apparatus of claim 1 , further comprising an alignment circuitry configured to control an irradiation location of the charged particle beam when a pattern is drawn on a substrate based on the location of the predetermined mark measured by the measurement circuitry.

4. A charged particle beam lithography method comprising:

irradiating a substrate with a charged particle beam, the substrate being provided with a predetermined mark;

detecting charged particles emitted from the substrate when the substrate is scanned by the charged particle beam and outputting a detection signal;

selecting an initial gain value with respect to the detection signal from a plurality of initial gain values corresponding to conditions of the scan;

selecting an initial level value from a plurality of initial level values of the amplifier for adjusting the detection signal, the plurality of initial level values corresponding to conditions of the scan;

amplifying and adjusting the detection signal based on the selected initial gain value and the selected initial level value;

outputting an amplified signal; and

measuring a location of the predetermined mark based on the amplified signal,

wherein the initial gain value and the initial level value are updated as a new initial gain value and a new initial level value based on a gain value and a level value used to measure the location of the predetermined mark successfully.

5. The method of claim 4 , further comprising aligning, based on the measured location of the predetermined mark, an irradiation location of the charged particle beam when a pattern is drawn on the substrate.