Semiconductor device
According to an embodiment of the present invention, there is provided a semiconductor device having a first semiconductor component and a second semiconductor component which are mounted on a wiring substrate. The first semiconductor component has a first terminal for transmitting a first signal between the first semiconductor component and the outside and a second terminal for transmitting a second signal between the first semiconductor component and the second semiconductor component. In addition, the second semiconductor component has a third terminal for transmitting the second signal between the second semiconductor component and the first semiconductor component. Further, the first signal is transmitted at a higher frequency than the second signal. Furthermore, the second terminal of the first semiconductor component and the third terminal of the second semiconductor component are electrically connected to each other via the first wiring member. In addition, the first terminal of the first semiconductor component is electrically connected to the wiring substrate via a first bump electrode without the first wiring member interposed therebetween.
1. A semiconductor device comprising:
a first semiconductor component;
a second semiconductor component;
a wiring substrate on which each of the first semiconductor component and second semiconductor component is mounted; and
a first wiring member that includes a plurality of wiring paths electrically connecting the first semiconductor component and the second semiconductor component to each other,
wherein the first semiconductor component includes a first main surface on which a first terminal for transmitting a first signal between the first semiconductor component and the outside and a second terminal for transmitting a second signal between the first semiconductor component and the second semiconductor component are arranged,
the second semiconductor component includes a second main surface on which a third terminal for transmitting the second signal between the second semiconductor component and the first semiconductor component is arranged,
the first signal is transmitted at a higher frequency than the second signal,
the first terminal of the first semiconductor component is electrically connected to the wiring substrate via a first bump electrode without the first wiring member interposed therebetween, and
the second terminal of the first semiconductor component and the third terminal of the second semiconductor component are electrically connected to each other via the first wiring member.
2. The semiconductor device according to claim 1 ,
wherein a separation distance between the second terminal of the first semiconductor component and the third terminal of the second semiconductor component is shorter than a separation distance between the first terminal of the first semiconductor component and the third terminal of the second semiconductor component.
3. The semiconductor device according to claim 2 ,
wherein the second terminal is electrically connected to the first wiring member via a second bump electrode, and
the third terminal is electrically connected to the first wiring member via a third bump electrode.
4. The semiconductor device according to claim 3 ,
wherein a fourth terminal and a fifth terminal that allow a ground potential to be supplied are arranged on the first main surface of the first semiconductor component,
the fourth terminal is electrically connected to the wiring substrate via a fourth bump electrode without the first wiring member interposed therebetween, and
the fifth terminal is electrically connected to the first wiring member via a fifth bump electrode.
5. The semiconductor device according to claim 4 ,
wherein the separation distance between the second terminal of the first semiconductor component and the third terminal of the second semiconductor component is shorter than a separation distance between the first terminal and the second terminal of the first semiconductor component.
6. The semiconductor device according to claim 5 ,
wherein the fourth terminal is arranged between the first terminal and the second terminal.
7. The semiconductor device according to claim 6 ,
wherein the separation distance between the second terminal of the first semiconductor component and the third terminal of the second semiconductor component is shorter than a separation distance between the fourth terminal and the second terminal of the first semiconductor component.
8. The semiconductor device according to claim 6 ,
wherein a sixth terminal that allows a power-supply potential to be supplied is arranged on the first main surface of the first semiconductor component, and
the sixth terminal is electrically connected to the wiring substrate via a sixth bump electrode without the first wiring member interposed therebetween.
9. The semiconductor device according to claim 8 ,
wherein the sixth terminal is arranged between the first terminal and the second terminal.
10. The semiconductor device according to claim 3 ,
wherein a seventh terminal that allows a ground potential to be supplied is arranged on the second main surface of the second semiconductor component, and
the seventh terminal is electrically connected to the wiring substrate via a seventh bump electrode without the first wiring member interposed therebetween.
11. The semiconductor device according to claim 10 ,
wherein an eighth terminal that allows a power-supply potential to be supplied is arranged on the second main surface of the second semiconductor component, and
the eighth terminal is electrically connected to the wiring substrate via an eighth bump electrode without the first wiring member interposed therebetween.
12. The semiconductor device according to claim 3 ,
wherein the first wiring member has a portion positioned between the first semiconductor component and the wiring substrate and another portion positioned between the second semiconductor component and the wiring substrate in a thickness direction of the wiring substrate.
13. The semiconductor device according to claim 3 ,
wherein each of the first bump electrode, second bump electrode and third bump electrode is encapsulated with resin.
14. The semiconductor device according to claim 13 ,
wherein a volume of each of the second bump electrode and third bump electrode is smaller than a volume of the first bump electrode.
15. The semiconductor device according to claim 14 ,
wherein the second bump electrode and the third bump electrode are encapsulated in a first resin body, and the first bump electrode is encapsulated in a second resin body that is separate from the first resin body.