IP Library Granted Patent US 10,325,949
Granted Patent B2
US 10,325,949 · App. 16/055,308 · Granted Jun 18, 2019

Image Sensor Device

Inventors: Chao-Ching Chang (Kaohsiung, TW); Sheng-Chan Li (Tainan, TW); Cheng-Hsien Chou (Tainan, TW); Tsung-Wei Huang (Taichung, TW); Min-Hui Lin (Tainan, TW); Yi-Ming Lin (Tainan, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
H01L27/1463H01L21/0228H01L21/02274H01L21/31053H01L27/1464H01L27/14621H01L27/14627H01L27/14629H01L27/14685H01L27/14689
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Quick Facts
Patent No.
US 10,325,949
App. No.
16/055,308
Granted
Jun 18, 2019
Kind
B2
Abstract

An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

Claims (34)

1. An image sensor device, comprising:

a substrate having a first surface, a second surface, and a light-sensing region;

a first isolation structure in the substrate and adjacent to the first surface, wherein the first isolation structure surrounds the light-sensing region; and

a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure, wherein the second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

2. The image sensor device as claimed in claim 1 , wherein a first top surface of the first isolation structure and a second top surface of the second isolation structure are substantially coplanar.

3. The image sensor device as claimed in claim 1 , wherein the second surface of the substrate and a bottom surface of the second isolation structure are substantially coplanar.

4. The image sensor device as claimed in claim 1 , further comprising:

a passivation layer between the second isolation structure and the first isolation structure and between the second isolation structure and the substrate.

5. The image sensor device as claimed in claim 4 , wherein the passivation layer is doped with boron, phosphorous, nitrogen, arsenic, or fluorine, and the passivation layer surrounds the light-sensing region.

6. The image sensor device as claimed in claim 4 , wherein a first top surface of the first isolation structure, a second top surface of the second isolation structure, and a third top surface of the passivation layer are substantially coplanar.

7. The image sensor device as claimed in claim 4 , wherein a first bottom surface of the second isolation structure and a second bottom surface of the passivation layer are substantially coplanar.

8. The image sensor device as claimed in claim 4 , wherein the second isolation structure surrounds a portion of the passivation layer.

9. The image sensor device as claimed in claim 1 , further comprising:

a color filter over the second surface, wherein the second surface is between the first surface and the color filter.

10. The image sensor device as claimed in claim 1 , wherein the portion of the first isolation structure continuously surrounds the light-sensing region.

11. An image sensor device, comprising:

a substrate having a first surface, a second surface, and a light-sensing region;

a first isolation structure in the substrate, wherein the first isolation structure surrounds the light-sensing region, and the first isolation structure partially protrudes from the first surface; and

a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure, wherein the second isolation structure surrounds the light-sensing region.

12. The image sensor device as claimed in claim 11 , wherein the second isolation structure partially protrudes from the first surface.

13. The image sensor device as claimed in claim 11 , wherein a first top surface of the first isolation structure and a second top surface of the second isolation structure are substantially coplanar.

14. The image sensor device as claimed in claim 11 , further comprising:

a device over the first surface, wherein the device comprises an active device or a passive device, and the first isolation structure is between the device and the second isolation structure.

15. The image sensor device as claimed in claim 11 , further comprising:

a reflective grid over the second surface, wherein the reflective grid is right over the second isolation structure.

16. An image sensor device, comprising:

a substrate having a first surface, a second surface, and a light-sensing region;

a first isolation structure in the substrate and adjacent to the first surface, wherein the first isolation structure surrounds the light-sensing region, and a first portion of the substrate is between the first isolation structure and the second surface; and

a second isolation structure passing through the first isolation structure and the first portion of the substrate, wherein the second isolation structure surrounds the light-sensing region and a second portion of the first isolation structure.

17. The image sensor device as claimed in claim 16 , wherein the second portion of the first isolation structure continuously surrounds the light-sensing region.

18. The image sensor device as claimed in claim 16 , wherein a first width of the second isolation structure decreases from the first surface to the second surface.

19. The image sensor device as claimed in claim 18 , wherein a second width of the first isolation structure decreases from the first surface toward the second surface.

20. The image sensor device as claimed in claim 16 , further comprising:

a lens over the second surface, wherein the lens is over the light-sensing region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2018
From: CHANG, CHAO-CHING; LI, SHENG-CHAN; CHOU, CHENG-HSIEN; HUANG, TSUNG-WEI; LIN, MIN-HUI; LIN, YI-MING
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Reel/Frame 046559/0442 →
Continuity (2)
Division 15663985 · Jul 31, 2017
Related Publication 20190035829A1 · Jan 31, 2019