High selectivity nitride removal process based on selective polymer deposition
A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.
1. A method comprising:
obtaining a FET structure comprising a semiconductor substrate, a gate stack on the substrate, silicon nitride spacers adjoining and directly contacting the gate stack, source/drain regions composed of doped semiconductor material and operatively associated with the gate stack and having exposed top surfaces, and a silicon nitride cap on the gate stack, the silicon nitride cap extending above the silicon nitride spacers;
generating a fluorohydrocarbon-containing plasma selective to silicon by decomposition of C x H y F z wherein x is an integer selected from 3, 4, 5 and 6, y and z are positive integers, and y is greater than z; and
anisotropically etching the silicon nitride cap and the silicon nitride spacers by simultaneously employing the fluorohydrocarbon-containing plasma to form a first hydrofluorocarbon polymer layer having a first thickness on the exposed top surfaces of the source/drain regions and a second hydrofluorocarbon polymer layer having a second thickness on the silicon nitride cap, the first thickness being greater than the second thickness, the second hydrofluorocarbon polymer layer further comprising a volatile nitrogen-containing compound formed by interaction of the fluorohydrocarbon-containing plasma with the silicon nitride comprising the silicon nitride cap.
2. The method of claim 1 , further including removing the first hydrofluorocarbon polymer layer from the top surfaces of the source/drain regions.
3. The method of claim 1 , wherein the source/drain regions comprise at least one of silicon germanium and silicon carbide.
4. The method of claim 1 , further including forming a photoresist layer having a selected thickness on the FET structure and patterning the photoresist to form an opening having selected dimensions and exposing the silicon nitride cap and the source/drain regions.
5. The method of claim 4 , further including maintaining the selected thickness and the selected dimensions of the photoresist layer during the step of anisotropically etching the silicon nitride cap.
6. The method of claim 5 , wherein the photoresist layer is comprised of mostly CxHy.
7. The method of claim 1 , wherein the first hydrofluorocarbon polymer layer comprises carbon at an atomic concentration between thirty and forty percent, hydrogen at an atomic concentration between forty and fifty percent, fluorine at an atomic concentration between five and ten percent, and oxygen at an atomic concentration less than five percent.
8. The method of claim 1 , wherein anisotropically etching the silicon nitride cap includes removing the silicon nitride cap, further including forming a third hydrofluorocarbon polymer layer on the gate stack subsequent to removing the silicon nitride cap.
9. The method of claim 8 , further including removing the first hydrofluorocarbon polymer layer from the source/drain regions and the third hydrofluorocarbon polymer layer from the gate stack.
10. The method of claim 1 , further including forming a soft mask having a selected thickness on the FET structure, patterning the soft mask to form an opening having selected dimensions and exposing the silicon nitride cap and the source/drain regions, further including forming a fourth hydrofluorocarbon polymer layer on the soft mask while anisotropically etching the silicon nitride cap such that the selected thickness of the mask and the selected dimensions of the opening remain substantially the same following anisotropically etching the silicon nitride cap.
11. The method of claim 10 , wherein the first hydrofluorocarbon polymer layer comprises carbon at an atomic concentration between thirty and forty percent, hydrogen at an atomic concentration between forty and fifty percent, fluorine at an atomic concentration between five and ten percent, and oxygen at an atomic concentration less than five percent.