IP Library Granted Patent US 10,326,413
Granted Patent B2
US 10,326,413 · App. 16/011,803 · Granted Jun 18, 2019

Power amplification circuit

Inventor: Satoshi Goto (Nagaokakyo, JP)
Assignee: Murata Manufacturing Co., Ltd.
H03F1/565H03F3/195H03F3/21H03F3/245H03F2200/108H03F2200/18H03F2200/222H03F2200/318H03F2200/387H03F2200/411H03F2200/451H03F2200/555
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,326,413
App. No.
16/011,803
Granted
Jun 18, 2019
Kind
B2
Abstract

A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Claims (9)

1. A power amplification circuit comprising:

a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked,

the capacitor element including

a first capacitor in which the first metal layer serves as a first electrode thereof and the second metal layer serves as a second electrode thereof, and

a second capacitor in which the second metal layer serves as a first electrode thereof and the third metal layer serves as a second electrode thereof; and

a transistor that amplifies a radio-frequency signal;

wherein the second electrode of the first capacitor and the first electrode of the second capacitor are connected to a collector of the transistor,

a first harmonic is output from the first electrode of the first capacitor, the first harmonic having a frequency that is around M times a frequency of the radio-frequency signal, where M is a natural number, and

a second harmonic is output from the second electrode of the second capacitor, the second harmonic having a frequency that is around N times the frequency of the radio-frequency signal, where N is a natural number.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2018
From: GOTO, SATOSHI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 046126/0766 →
Priority Claims (1)
JP 2016-071197 · Mar 31, 2016 · national
Continuity (2)
Division 15430890 · Feb 13, 2017
Related Publication 20180351518A1 · Dec 6, 2018