Method for designing layout of semiconductor device and method for manufacturing semiconductor device using the same
A method of manufacturing a semiconductor device includes configuring a layout pattern; and forming conductive lines corresponding to the layout pattern on a substrate, wherein configuring the layout pattern includes: arranging pre-conductive patterns and post-conductive patterns for a first logic cell, a second logic cell, and a third logic cell; rearranging the pre-conductive patterns and the post-conductive patterns so that two conductive patterns that are adjacent to a boundary between two adjacent logic cells from among the first logic cell, the second logic cell, and the third logic cell are formed by different photolithography processes; and arranging conductive patterns for a dummy cell arranged between the second logic cell and the third logic cell.
1. A method of manufacturing a semiconductor device, the method comprising:
configuring a layout pattern; and
forming conductive lines corresponding to the layout pattern on a substrate, wherein configuring the layout pattern comprises:
arranging pre-conductive patterns and post-conductive patterns for a first logic cell, a second logic cell, and a third logic cell;
rearranging the pre-conductive patterns and the post-conductive patterns so that two conductive patterns that are adjacent to a boundary between two adjacent logic cells from among the first logic cell, the second logic cell, and the third logic cell are formed by different photolithography processes; and
arranging conductive patterns for a dummy cell arranged between the second logic cell and the third logic cell,
wherein a first conductive pattern, which is adjacent to the second logic cell, from among conductive patterns of the first logic cell is spaced a first reference distance apart from a second conductive pattern, which is adjacent to the first logic cell, from among conductive patterns of the second logic cell, and
wherein a dummy pattern, which is adjacent to the third logic cell, from among conductive patterns of the dummy cell is spaced a second reference distance apart from a third conductive pattern, which is adjacent to the dummy cell, from among conductive patterns of the third logic cell, and
wherein the second reference distance is greater than the first reference distance.
2. The method of claim 1 , wherein the first reference distance and the second reference distance are set based on a resolution of a photolithography process for forming the pre-conductive patterns and the post-conductive patterns.
3. The method of claim 1 , wherein the first conductive pattern and the second conductive pattern are formed by a patterning process using different photomasks, and
wherein the dummy line and the third conductive pattern are formed by a patterning process using the same photomask.
4. The method of claim 3 , wherein a fourth conductive pattern, which is adjacent to the dummy cell, from among conductive patterns of the second logic cell and the third conductive pattern is formed by a patterning process using different photomasks.
5. The method of claim 1 , wherein at least two of the first conductive pattern, the second conductive pattern, the third conductive pattern, and the dummy pattern are arranged in a first direction perpendicular to a direction in which the first logic cell, the second logic cell, the third logic cell, and the dummy cell are arranged.
6. The method of claim 1 , wherein the dummy cell is one from among a filler, a filling capacitor, and a spare cell.