Semiconductor device for wafer-scale integration
The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.
1. A semiconductor device comprising:
a semiconductor wafer with an integrated circuit;
a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material;
the semiconductor wafer being bonded to the further semiconductor wafer by a bonding layer;
an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer; and
an electrically conductive layer connecting the contact layer with the integrated circuit,
wherein openings forming a pattern of trenches divide the semiconductor wafer and the further semiconductor wafer into a plurality of separate dies.
2. The semiconductor device of claim 1 , wherein the further semiconductor wafer comprises cadmium telluride or cadmium zinc telluride.
3. The semiconductor device of claim 1 or 2 , wherein the semiconductor wafer comprises silicon, and
wherein the further semiconductor wafer comprises a semiconductor material for x-ray conversion.
4. The semiconductor device of claim 1 or 2 , wherein the semiconductor wafer is less than 300 μm thick, and
wherein the further semiconductor wafer is at least 300 μm thick.
5. The semiconductor device of claim 1 or 2 , further comprising:
electrically conductive contact pads between the semiconductor wafer and the further semiconductor wafer; and
further electrically conductive layers connecting the contact pads with the integrated circuit.