Flexible display device and method of manufacturing the same
A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array, The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.
1. A method of manufacturing a flexible display device, the method comprising:
forming a base substrate on a first sacrificial layer formed on a first supporting substrate;
forming a display device array on the base substrate;
forming a second sacrificial layer on a second supporting substrate;
forming a touch array on the second sacrificial layer;
adhering the first supporting substrate onto the second supporting substrate using an adhesive;
irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and to separate the first supporting substrate from the base substrate; and
irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other and such that the second sacrificial layer is fixed on the touch array,
wherein the second sacrificial layer includes at least one selected from the group of oxidized molybdenum (MoO 3 ), lead zirconate titanate (PZT), gallium nitride (GaN), and an amorphous silicon (a-Si) based inorganic material, and
wherein the first sacrificial layer and the second sacrificial layer include different materials.
2. The method as claimed in claim 1 , wherein the second sacrificial layer is formed on the second supporting substrate by an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method.
3. The method as claimed in claim 1 , wherein a thickness of the second sacrificial layer is 1,000 Å through 3,000 Å.
4. The method as claimed in claim 1 , further comprising coating a protective layer onto the second sacrificial layer.
5. The method as claimed in claim 4 , wherein coating the protective layer onto the second sacrificial layer is performed by an inkjet method.
6. The method as claimed in claim 1 , wherein the base substrate comprises one selected from the group of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethylene etherphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfonate, polyimide, and polyacrylate.
7. The method as claimed in claim 1 , wherein forming the display device array comprises:
forming a thin film transistor (TFT) on the base substrate;
forming a first electrode on the TFT;
forming an organic light emitting layer on the first electrode; and
forming a second electrode on the organic light emitting layer.