Photoelectric conversion film, solid-state image sensor, and electronic device
[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R 1 to R 3 each independently represent a substituted or unsubstituted ring structure, and at least one of R 1 to R 3 includes at least one hetero atom in the ring structure.
1. A photoelectric conversion film, comprising:
a bulk hetero mixed layer, comprising:
a subphthalocyanine derivative represented by the following General Formula (1),
as a n-type light electric conversion material, where, in General Formula (1),
X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group,
R 1 to R 3 each independently represent a substituted or unsubstituted ring structure, and
at least one of R 1 to R 3 includes at least one hetero atom in the ring structure.
2. The photoelectric conversion film according to claim 1 , wherein at least one of R 1 to R 3 has a ring structure including a substituent.
3. The photoelectric conversion film according to claim 2 , wherein the substituent of R 1 to R 3 is a halogen.
4. The photoelectric conversion film according to claim 1 , wherein R 1 to R 3 have a ring structure including a π-conjugated system structure.
5. The photoelectric conversion film according to claim 1 , wherein R 1 to R 3 have a ring structure including 3 or more and 8 or fewer ring constituent atoms.
6. The photoelectric conversion film according to claim 5 , wherein R 1 to R 3 have a ring structure including 6 ring constituent atoms.
7. The photoelectric conversion film according to claim 1 , wherein a hetero atom included in the ring structure of R 1 to R 3 is a nitrogen atom.
8. The photoelectric conversion film according to claim 1 , wherein X is a halogen.
9. A solid-state image sensor, comprising:
a photoelectric conversion film, comprising:
a bulk hetero mixed layer, comprising:
a subphthalocyanine derivative represented by the following General Formula (1),
as a n-type light electric conversion material, where, in General Formula (1),
X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group,
R 1 to R 3 each independently represent a substituted or unsubstituted ring structure, and
at least one of R 1 to R 3 includes at least one hetero atom in the ring structure.
10. The solid-state image sensor according to claim 9 ,
wherein the photoelectric conversion film absorbs green light having a wavelength of greater than or equal to 450 nm and equal to or less than 600 nm and photoelectrically converts the absorbed green light.
11. The solid-state image sensor according to claim 9 , configured as a laminated type solid-state image sensor, comprising:
a first chip in which the photoelectric conversion film is formed; and
a second chip in which a signal processing circuit configured to process a signal that is obtained by photoelectric conversion by the photoelectric conversion film is formed, the second chip being laminated with the first chip.
12. An electronic device, comprising:
a solid-state image sensor, comprising;
a photoelectric conversion film, comprising:
a bulk hetero mixed layer, comprising:
a subphthalocyanine derivative represented by the following General Formula (1);
an optical system configured to guide incident light to the solid-state image sensor; and
an arithmetic processing circuit configured to perform arithmetic processing of an output signal from the solid-state image sensor,
as a n-type light electric conversion material, where, in General Formula (1),
X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group,
R 1 to R 3 each independently represent a substituted or unsubstituted ring structure, and
at least one of R 1 to R 3 includes at least one hetero atom in the ring structure.