Carbon dot light emitting diodes

1. A light emitting diode (LED) device comprising:

a hole transport layer;

an electron transport layer,

an active emissive layer between the hole transport layer and the electron transport layer; and

carbon dots forming the active emissive layer;

wherein the light emitting diode device is an electroluminescent light emitting diode device, and the carbon dots are substantially spherical in shape.

2. The LED device of claim 1 wherein the carbon dots are formed of an organic carbon-containing materials.

3. The LED device of claim 1 wherein the carbon dots are between 0.5 and 20 nm in size.

4. The LED device of claim 1 further comprising a transparent conducting film anode, the transparent conducting film including one of indium fin oxide (ITO), fluorine doped tin oxide (FTO), carbon nanotube networks, and graphene.

5. The LED device of claim 1 further comprising a hole injection layer (HIL) including one of poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), the hole injection layer having a thickness of between 10 and 100 nm.

6. The LED device of claim 1 wherein the hole transport layer (HTL) includes one of poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine) (poly-TPD) and poly(N-vinylcarbazole) (PVK), the hole transport layer having a thickness of between 10 and 100 nm.

7. The LED device of claim 1 wherein the carbon-dot active emissive layer has a thickness of between 10 and 100 nm.

8. The LED device of claim 1 wherein the electron transport layer includes 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) at a thickness of between 2 to 50 nm thick.

9. The LED device of claim 8 further comprising followed by a LiF/Al bilayer cathode, where the LiF layer has a thickness of between 1 and 20 nm and the Al layer has a thickness of between 10 and 300 nm.

10. The LED device of claim 1 wherein the electron transport layer includes ZnO nanoparticle, where the electron transport layer has a thickness of between 5 and 100 nm thick.

11. The LED device of claim 10 , further comprising an Al cathode having a thickness of 10 between 300 nm.

12. The LED device of claim 1 further comprising a hole injection layer sandwiched between a transparent conducting film anode and the hole transport layer, and a the electron transport layer sandwiched between the carbon dot active emissive layer and a cathode.

13. The LED device of claim 1

further comprising

a transparent conducting film anode, the transparent conducting film including one of indium tin oxide (ITO), fluorine doped tin oxide (FTO), carbon nanotube networks, and graphene;

a hole injection layer (HIL) including one of poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), the hole injection layer having a thickness of between 10 and 100 nm;

the hole transport layer (HTL) includes one of poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine) (poly-TPD) and poly(N-vinylcarbazole (PVK), the hole transport layer having a thickness of between 10 and 100 nm; and

a LiF/Al bilayer cathode, where the LiF layer has a thickness of between 1 and 20 nm and the Al layer has a thickness of between 10 and 300 nm;

wherein

the carbon dots are between 0.5 and 20 nm in size;

the carbon-dot active emissive layer has a thickness of between 10 and 100 nm;

the electron transport layer includes 1,3,5-(N-phenylbenzimidazol-2-yl)benzene (TPBI) at a thickness of between 2 to 50 nm thick; and

the electron transport layer includes ZnO nanoparticle, where the electron transport layer has a thickness of between 5 and 100 nm thick.

14. The LED device of claim 1 wherein the carbon dots are formed of an inorganic carbon-containing material.