Method for forming hybrid bonding with through substrate via (TSV)

1. A method for forming a semiconductor device structure, comprising:

forming a first conductive material in a first polymer material in a first wafer;

forming a second conductive material in a second polymer material in a second wafer;

hybrid bonding the first wafer and the second wafer to form a hybrid bonding structure, wherein the hybrid bonding structure comprises a metallic bonding interface and a polymer-to-polymer bonding structure; and

forming at least one through-substrate via (TSV) through the second wafer, wherein the TSV extends from a bottom surface of the second wafer to a metallization structure of the first wafer, wherein the metallization structure is in direct contact with the polymer-to-polymer bonding structure.

2. The method as claimed in claim 1 , further comprising:

forming an interconnect structure over the bottom surface of the second wafer after forming the TSV, wherein the interconnect structure is electrically connected to the metallization structure of the first wafer.

3. The method as claimed in claim 1 , wherein hybrid bonding the first wafer and the second wafer comprises:

bonding the first conductive material of the first wafer to the second conductive material of the second wafer; and

bonding the first polymer material of the first wafer to the second polymer material of the second wafer.

4. The method as claimed in claim 1 , wherein hybrid bonding the first wafer and the second wafer further comprises:

heating the first wafer and the second wafer to a first temperature such that the first polymer material and the second polymer material are intermixed; and

heating the first wafer and the second wafer to a second temperature higher than the first temperature.

5. The method as claimed in claim 4 , wherein the first temperature is in a range from about 100° C. to about 200° C., and the second temperature is in a range from about 200° C. to about 380° C.

6. The method as claimed in claim 1 , further comprising:

thinning the second wafer from the bottom surface of the second wafer before forming at least one TSV through the second wafer.

7. The method as claimed in claim 1 , further comprising:

forming a first transistor in the first wafer; and

forming a second transistor in the second wafer before hybrid bonding the first wafer and the second wafer.

8. The method as claimed in claim 1 , wherein the TSV stops at a top surface of the metallization structure and is electrically connected to the metallization structure.

9. The method as claimed in claim 1 , further comprising:

forming a first diffusion barrier layer in the first polymer material, wherein the first conductive material is surrounded by the first diffusion barrier layer; and

forming a second diffusion barrier layer in the second polymer material, wherein the second conductive material is surrounded by the second diffusion barrier layer.

10. A method for forming a semiconductor device structure, comprising:

forming a first bonding structure over a first substrate, wherein the first bonding structure comprises a first conductive material in a first polymer material, and a first diffusion barrier layer is between the first conductive material and the first polymer material;

forming a second bonding structure over a second substrate, wherein the second bonding structure comprises a second conductive material in a second polymer material and a second diffusion barrier layer is between the second conductive material and the second polymer material;

hybrid bonding the first bonding structure and the second bonding structure; and

forming a first TSV through the second substrate, wherein the first TSV is through a polymer-to-polymer bonding structure.

11. The method as claimed in claim 10 , further comprising:

forming an metallization structure over the second substrate; and

forming a second TSV through the second substrate, wherein the second TSV stops at a bottom surface of the metallization structure.

12. The method as claimed in claim 10 , further comprising:

thinning the second substrate from a bottom surface of the second substrate before forming the first TSV through the second substrate.

13. The method as claimed in claim 10 , further comprising:

forming a first transistor over the first substrate; and

forming a second transistor over the second substrate before hybrid bonding the first bonding structure and the second bonding structure.

14. The method as claimed in claim 10 , wherein hybrid bonding the first bonding structure and the second bonding structure comprises:

heating the first substrate and the second substrate to a first temperature such that the first polymer material and the second polymer material are intermixed; and

heating the first substrate and the second substrate to a second temperature higher than the first temperature.

15. The method as claimed in claim 10 , further comprising:

forming an interconnect structure over a bottom surface of the second substrate after forming the first TSV, wherein the interconnect structure is electrically connected to the first TSV.

16. A method for forming a semiconductor device structure, comprising:

forming a conductive feature over a first substrate;

forming a first conductive material in a first polymer material over the first substrate, wherein a first diffusion barrier layer surrounds the first conductive material, and the first diffusion barrier layer is between the first conductive material and the conductive feature;

forming a second conductive material in a second polymer material over a second substrate;

bonding the first conductive material and the second conductive material, and the first polymer material and the second polymer material to form a hybrid bonding structure;

thinning the second substrate from a bottom surface of the second substrate; and

forming a TSV through the second substrate, wherein the TSV extends from a bottom surface of the second substrate, through the hybrid bonding structure to a metallization structure over the first substrate.

17. The method as claimed in claim 16 , further comprising:

forming a first transistor over the first substrate; and

forming a second transistor over the second substrate before bonding the first conductive material and the second conductive material, and the first polymer material and the second polymer material.

18. The method as claimed in claim 16 , further comprising:

forming an interconnect structure over the bottom surface of the second substrate after forming the TSV, wherein the interconnect structure is electrically connected to the TSV.

19. The method as claimed in claim 16 , wherein the hybrid bonding structure comprises a metallic bonding interface and a polymer-to-polymer bonding structure.

20. The method as claimed in claim 16 , wherein the step of bonding the first conductive material and the second conductive material, and the first polymer material and the second polymer material comprises:

heating the first substrate and the second substrate to a first temperature such that the first polymer material and the second polymer material are intermixed; and

heating the first substrate and the second substrate to a second temperature higher than the first temperature.